IRFBC40A Vishay, IRFBC40A Datasheet

MOSFET N-CH 600V 6.2A TO-220AB

IRFBC40A

Manufacturer Part Number
IRFBC40A
Description
MOSFET N-CH 600V 6.2A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRFBC40A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1036pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
6.2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6.2 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFBC40A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFBC40A
Manufacturer:
IR
Quantity:
550
Part Number:
IRFBC40A
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFBC40APBF
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
IRFBC40APBF
Manufacturer:
IR墨西哥
Quantity:
20 000
Company:
Part Number:
IRFBC40APBF
Quantity:
14 950
Company:
Part Number:
IRFBC40APBF
Quantity:
25 780
Company:
Part Number:
IRFBC40APBF
Quantity:
70 000
Part Number:
IRFBC40AS
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFBC40ASPBF
Quantity:
15 000
Company:
Part Number:
IRFBC40ASTRLPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91112
S11-0515-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 6.2 A, dI/dt ≤ 80 A/μs, V
(Ω)
TO-220AB
J
= 25 °C, L = 29.6 mH, R
a
D
c
a
a
DD
b
V
≤ V
GS
g
DS
= 10 V
= 25 Ω, I
, T
G
J
N-Channel MOSFET
Single
≤ 150 °C.
600
42
10
20
This datasheet is subject to change without notice.
AS
C
= 6.2 A (see fig. 12).
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
GS
1.2
6-32 or M3 screw
at 10 V
T
C
for 10 s
= 25 °C
T
T
C
C
TO-220AB
IRFBC40APbF
SiHFBC40A-E3
IRFBC40A
SiHFBC40A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
Requirement
Ruggedness
Avalanche Voltage and Current
Characterized
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
IRFBC40A, SiHFBC40A
Specified
g
Results in Simple Drive
- 55 to + 150
Capacitance
LIMIT
300
± 30
600
570
125
6.2
3.9
1.0
6.2
6.0
1.1
25
13
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
and
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

Related parts for IRFBC40A

IRFBC40A Summary of contents

Page 1

... C SYMBOL ° 100 ° ° for screw = 6.2 A (see fig. 12). AS ≤ 150 °C. This datasheet is subject to change without notice. IRFBC40A, SiHFBC40A Vishay Siliconix Results in Simple Drive g RoHS* COMPLIANT Capacitance and Specified oss LIMIT UNIT V 600 DS V ± 6 3.9 ...

Page 2

... IRFBC40A, SiHFBC40A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics 3 6.2 A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. IRFBC40A, SiHFBC40A Vishay Siliconix ° µs PULSE WIDTH 5.0 9.0 6.0 7.0 8.0 10 Gate-to-Source Voltage ( 100 120 140 160 Junction Temperature www ...

Page 4

... IRFBC40A, SiHFBC40A Vishay Siliconix 100000 iss = rss = oss = 10000 C iss 1000 C oss 100 10 C rss 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 6 480 300 120 Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (s) This datasheet is subject to change without notice. IRFBC40A, SiHFBC40A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ ...

Page 6

... IRFBC40A, SiHFBC40A Vishay Siliconix D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 1400 TOP 1200 BOTTOM 1000 800 600 400 200 100 Starting Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... D • D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRFBC40A, SiHFBC40A Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords