FDPF20N50T Fairchild Semiconductor, FDPF20N50T Datasheet - Page 3

• Manufacturer Part Number: FDPF20N50T
• Description: MOSFET N-CH 500V 20A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF20N50T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 59.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.23 Ohms
• Forward Transconductance Gfs (max / Min): 24.6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 38.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP20N50 / FDPF20N50 Rev. C
Typical Performance Characteristics
6000
5000
4000
3000
2000
1000
Figure 5. Capacitance Characteristics
10
10
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
1
0
10
0
10
0.8
0.6
0.4
0.2
0.0
-1
-1
Drain Current and Gate Voltage
Top :
Bottom :
0
10.0 V
15.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
C
C
C
GS
rss
oss
iss
15
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
30
10
10
I
D
0
0
, Drain Current [A]
45
V
GS
C
C
C
= 10V
iss
oss
rss
= C
= C
= C
60
gs
gd
ds
+ C
10
+ C
10
1
* Notes :
* Note : T
1
gd
V
gd
1. 250
2. T
GS
(C
* Note :
1. V
2. f = 1 MHz
C
ds
= 20V
= 25
75
μ
= shorted)
s Pulse Test
J
GS
= 25
o
= 0 V
C
o
C
90
3
12
10
10
10
10
10
10
8
6
4
2
0
Figure 2. Transfer Characteristics
2
1
0
Figure 4. Body Diode Forward Voltage
1
0
0
0.2
Figure 6. Gate Charge Characteristics
2
Variation vs. Source Current
0.4
10
4
150
25
150
and Temperatue
o
V
0.6
V
o
Q
C
C
GS
SD
o
G
C
, Source-Drain voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
20
6
25
0.8
V
V
V
o
C
DS
DS
DS
= 250V
= 400V
= 100V
-55
1.0
30
o
8
C
1.2
*Notes :
* Notes :
1. V
2. 250
* Note : I
1. V
2. 250
GS
DS
10
μ
40
= 0V
s Pulse Test
= 40V
μ
s Pulse Test
D
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1.4
= 20A
1.6
12
50