FDI038AN06A0 Fairchild Semiconductor, FDI038AN06A0 Datasheet

MOSFET N-CH 60V 80A TO-262AB

FDI038AN06A0

Manufacturer Part Number
FDI038AN06A0
Description
MOSFET N-CH 60V 80A TO-262AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDI038AN06A0

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
124nC @ 10V
Input Capacitance (ciss) @ Vds
6400pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
310 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDI038AN06A0
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2010 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench
60V, 80A, 3.8m
Features
• r
• Q
• Low Miller Charge
• Low Q
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82584
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
E
P
T
R
R
(FLANGE)
D
DRAIN
GS
J
DSS
AS
D
Symbol
, T
JC
JA
DS(ON)
g
(tot) = 95nC (Typ.), V
STG
RR
= 3.5m (Typ.), V
Body Diode
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-220, TO-262
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
TO-220AB
FDP SERIES
GS
GATE
GS
amb
C
= 10V
DRAIN
< 151
= 10V, I
SOURCE
o
C
= 25
o
C, V
o
D
C, V
®
= 80A
GS
MOSFET
GS
Parameter
= 10V)
T
= 10V, with R
C
= 25°C unless otherwise noted
(FLANGE)
DRAIN
JA
= 62
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
TO-262AB
FDI SERIES
SOURCE
o
C/W)
GATE
DRAIN
G
-55 to 175
Ratings
Figure 4
2.07
0.48
625
310
60
80
17
62
20
FDP038AN06A0 / FDI038AN06A0 Rev. B2
D
S
December 2010
Units
W/
o
o
C/W
C/W
mJ
o
W
A
V
V
A
A
C
o
C

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FDI038AN06A0 Summary of contents

Page 1

... Primary Switch for 12V and 24V systems SOURCE DRAIN GATE DRAIN TO-262AB (FLANGE) FDI SERIES T = 25°C unless otherwise noted C Parameter 10V 10V, with C/ December 2010 Ratings Units Figure 4 A 625 mJ 310 -55 to 175 C o 0.48 C C/W FDP038AN06A0 / FDI038AN06A0 Rev. B2 ...

Page 2

... 75A, dI /dt = 100A 75A, dI /dt = 100A Tape Width Quantity N/A 50 units N/A 50 units Min Typ Max 150 250 100 0.0035 0.0038 - 0.0049 0.0074 - 0.0071 0.0078 - 6400 - - 1123 - - 367 - 96 124 - 30V DD = 80A - 1.0mA - 175 - 144 - - 115 - - 1. 1 FDP038AN06A0 / FDI038AN06A0 Rev. B2 Units ...

Page 3

... MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDP038AN06A0 / FDI038AN06A0 Rev. B2 175 ...

Page 4

... Resistance vs Junction Temperature o STARTING STARTING T = 150 (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED + DSS DD 0 TIME IN AVALANCHE (ms) AV Capability V = 20V 10V PULSE DURATION = DUTY CYCLE = 0.5% MAX C 0.5 1 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDP038AN06A0 / FDI038AN06A0 Rev. B2 100 = 1.5 =80A D 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant = 250 A - 120 160 JUNCTION TEMPERATURE ( 30V WAVEFORMS IN DESCENDING ORDER 80A 40A GATE CHARGE (nC) g Gate Current FDP038AN06A0 / FDI038AN06A0 Rev. B2 200 100 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2010 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDP038AN06A0 / FDI038AN06A0 Rev 10V 90% ...

Page 7

... DPLCAP RSLC2 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDP038AN06A0 / FDI038AN06A0 Rev ...

Page 8

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDP038AN06A0 / FDI038AN06A0 Rev. B2 DRAIN 2 SOURCE 3 ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDP038AN06A0 / FDI038AN06A0 Rev. B2 ...

Page 10

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μ SerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition Rev. I51 FDP038AN06A0 / FDI038AN06A0 Rev. B2 ...

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