FDI038AN06A0 Fairchild Semiconductor, FDI038AN06A0 Datasheet
FDI038AN06A0
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FDI038AN06A0 Summary of contents
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... Primary Switch for 12V and 24V systems SOURCE DRAIN GATE DRAIN TO-262AB (FLANGE) FDI SERIES T = 25°C unless otherwise noted C Parameter 10V 10V, with C/ December 2010 Ratings Units Figure 4 A 625 mJ 310 -55 to 175 C o 0.48 C C/W FDP038AN06A0 / FDI038AN06A0 Rev. B2 ...
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... 75A, dI /dt = 100A 75A, dI /dt = 100A Tape Width Quantity N/A 50 units N/A 50 units Min Typ Max 150 250 100 0.0035 0.0038 - 0.0049 0.0074 - 0.0071 0.0078 - 6400 - - 1123 - - 367 - 96 124 - 30V DD = 80A - 1.0mA - 175 - 144 - - 115 - - 1. 1 FDP038AN06A0 / FDI038AN06A0 Rev. B2 Units ...
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... MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDP038AN06A0 / FDI038AN06A0 Rev. B2 175 ...
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... Resistance vs Junction Temperature o STARTING STARTING T = 150 (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED + DSS DD 0 TIME IN AVALANCHE (ms) AV Capability V = 20V 10V PULSE DURATION = DUTY CYCLE = 0.5% MAX C 0.5 1 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDP038AN06A0 / FDI038AN06A0 Rev. B2 100 = 1.5 =80A D 200 ...
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... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant = 250 A - 120 160 JUNCTION TEMPERATURE ( 30V WAVEFORMS IN DESCENDING ORDER 80A 40A GATE CHARGE (nC) g Gate Current FDP038AN06A0 / FDI038AN06A0 Rev. B2 200 100 ...
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... Figure 19. Switching Time Test Circuit ©2010 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDP038AN06A0 / FDI038AN06A0 Rev 10V 90% ...
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... DPLCAP RSLC2 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDP038AN06A0 / FDI038AN06A0 Rev ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDP038AN06A0 / FDI038AN06A0 Rev. B2 DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDP038AN06A0 / FDI038AN06A0 Rev. B2 ...
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... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μ SerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition Rev. I51 FDP038AN06A0 / FDI038AN06A0 Rev. B2 ...