IRFBC20 Vishay, IRFBC20 Datasheet

MOSFET N-CH 600V 2.2A TO-220AB

IRFBC20

Manufacturer Part Number
IRFBC20
Description
MOSFET N-CH 600V 2.2A TO-220AB
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRFBC20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.4 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.2 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBC20

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 2.2 A, dI/dt ≤ 40 A/μs, V
= 50 V, starting T
(Ω)
TO-220AB
a
J
D
= 25 °C, L = 31 mH, R
c
a
a
DD
b
V
≤ V
GS
= 10 V
DS
G
, T
N-Channel MOSFET
J
≤ 150 °C.
Single
600
3.0
8.9
18
This datasheet is subject to change without notice.
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
4.4
GS
AS
6-32 or M3 screw
at 10 V
= 2.2 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRFBC20PbF
SiHFBC20-E3
IRFBC20
SiHFBC20
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
IRFBC20, SiHFBC20
design,
- 55 to + 150
LIMIT
300
± 20
0.40
600
2.2
1.4
8.0
2.2
5.0
3.0
1.1
84
50
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
mJ
mJ
COMPLIANT
°C
W
V
A
A
Available
and
1

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IRFBC20 Summary of contents

Page 1

... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 Ω 2.2 A (see fig. 12 ≤ 150 °C. This datasheet is subject to change without notice. IRFBC20, SiHFBC20 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 600 ± 2 1 8.0 DM 0.40 W/° ...

Page 2

... IRFBC20, SiHFBC20 Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Document Number: 91106 S11-0514-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFBC20, SiHFBC20 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

Page 4

... IRFBC20, SiHFBC20 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

Page 5

... Document Number: 91106 S11-0514-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFBC20, SiHFBC20 Vishay Siliconix D.U. ...

Page 6

... IRFBC20, SiHFBC20 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... D • D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRFBC20, SiHFBC20 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... F H(1) J(1) L L(1) Ø ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 Note * 1.62 mm (dimension including protrusion) Heatsink hole for HVM C J(1) Package Information Vishay Siliconix MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.25 4.65 0.167 0.183 0.69 1.01 0.027 0.040 1.20 1.73 ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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