MOSFET N-CH 500V 20A TO-220F

FDPF20N50FT

Manufacturer Part NumberFDPF20N50FT
DescriptionMOSFET N-CH 500V 20A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF20N50FT datasheet
 

Specifications of FDPF20N50FT

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs260 mOhm @ 10A, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C20AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs65nC @ 10VInput Capacitance (ciss) @ Vds3390pF @ 25V
Power - Max38.5WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.26 Ohm @ 10 V
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current20 APower Dissipation38500 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP20N50F / FDPF20N50FT
N-Channel MOSFET, FRFET
500V, 20A, 0.26Ω
Features
• R
= 0.22Ω ( Typ.)@ V
= 10V, I
DS(on)
GS
• Low gate charge ( Typ. 50nC)
• Low C
( Typ. 27pF)
rss
• Fast reverse recovery switching of built-in diode
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
TO-220
G
S
D
FDP Series
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GSS
I
Drain Current
D
I
Drain Current
DM
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation
D
T
, T
Operating and Storage Temperature Range
J
STG
Maximum Lead Temperature for Soldering Purpose,
T
L
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction to Case
θJC
R
Thermal Resistance, Case to Sink Typ.
θCS
R
Thermal Resistance, Junction to Ambient
θJA
©2007 Fairchild Semiconductor Corporation
FDP20N50F / FDPF20N50FT Rev. A1
= 10A
D
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220F
G
D
S
FDPF Series
o
T
= 25
C unless otherwise noted
C
Parameter
o
-Continuous (T
= 25
C)
C
o
-Continuous (T
= 100
C)
C
- Pulsed
o
(T
= 25
C)
C
o
- Derate above 25
C
Parameter
1
October 2007
UniFET
D
G
S
FDP20N50F
FDPF20N50FT
500
±30
20
20*
12.9
12.9*
(Note 1)
80
80*
(Note 2)
1110
(Note 1)
20
(Note 1)
25
(Note 3)
4.5
250
38.5
2.0
0.3
-55 to +150
300
FDP20N50F FDPF20N50FT
0.5
3.3
0.5
-
62.5
62.5
www.fairchildsemi.com
TM
tm
Units
V
V
A
A
mJ
A
mJ
V/ns
W
o
W/
C
o
C
o
C
Units
o
C/W

FDPF20N50FT Summary of contents

  • Page 1

    ... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP20N50F / FDPF20N50FT Rev 10A D Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

  • Page 2

    ... Starting ≤ 20A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP20N50F / FDPF20N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

  • Page 3

    ... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C iss = oss = rss = oss 4500 C 3000 iss 1500 C rss 0 0 Drain-Source Voltage [V] DS FDP20N50F / FDPF20N50FT Rev. A1 Figure 2. Transfer Characteristics 100 10 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 400 100 20V GS o *Note: T ...

  • Page 4

    ... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP20N50F 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0.002 -5 10 FDP20N50F / FDPF20N50FT Rev. A1 (Continued) Figure 8. Maximum Safe Operating Area 200 100 10 1 0.1 *Notes 1mA D 0.01 1 100 150 200 o ...

  • Page 5

    ... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF20N50FT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP20N50F / FDPF20N50FT Rev. A1 (Continued Rectangular Pulse Duration [sec *Notes (t) = 3.3 C/W Max. θ Duty Factor ( θ www.fairchildsemi.com ...

  • Page 6

    ... FDP20N50F / FDPF20N50FT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP20N50F / FDPF20N50FT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

  • Page 8

    ... Mechanical Dimensions FDP20N50F / FDPF20N50FT Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions 10.16 MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP [2.54 ±0.20 ] 9.40 FDP20N50F / FDPF20N50FT Rev. A1 TO-220F ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ±0.20 ] ±0.20 9 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 10

    ... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP20N50F / FDPF20N50FT Rev. A1 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...