FDPF20N50FT Fairchild Semiconductor, FDPF20N50FT Datasheet - Page 5

• Manufacturer Part Number: FDPF20N50FT
• Description: MOSFET N-CH 500V 20A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF20N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3390pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 38500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP20N50F / FDPF20N50FT Rev. A1
Typical Performance Characteristics
0.01
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
0.1
1
5
10
0.5
0.05
0.2
0.1
0.02
0.01
-4
Single pulse
10
-3
10
Rectangular Pulse Duration [sec]
-2
10
(Continued)
-1
10
5
0
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
10
DM
θ
JM
1
JC
- T
(t) = 3.3
C
t
= P
1
t
2
o
DM
10
C/W Max.
2
* Z
1
θ
/t
JC
2
(t)
10
3
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