IRFI9Z24G Vishay, IRFI9Z24G Datasheet
IRFI9Z24G
Specifications of IRFI9Z24G
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IRFI9Z24G Summary of contents
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... TO-220 FULLPAK IRFI9Z24GPbF SiHFI9Z24G-E3 IRFI9Z24G SiHFI9Z24G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 8.5 A (see fig. 12 ≤ 175 ° IRFI9Z24G, SiHFI9Z24G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT ± 8 6 0.24 E 200 8.5 ...
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... IRFI9Z24G, SiHFI9Z24G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91171 S09-0062-Rev. A, 02-Feb-09 IRFI9Z24G, SiHFI9Z24G = 25 °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91171 S09-0062-Rev. A, 02-Feb-09 ...
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... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91171 S09-0062-Rev. A, 02-Feb-09 IRFI9Z24G, SiHFI9Z24G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit t d(on Fig. 10b - Switching Time Waveforms ...
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... IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91171 ...
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... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRFI9Z24G, SiHFI9Z24G Vishay Siliconix + + P. www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...