IRFZ40 Vishay, IRFZ40 Datasheet

IRFZ40

Manufacturer Part Number

IRFZ40

Description

MOSFET N-CH 50V 35A TO-220AB

Manufacturer

Vishay

Series

HEXFET®r

Datasheet

1.IRFZ40PBF.pdf (6 pages)

Specifications of IRFZ40

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

28 mOhm @ 29A, 10V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

35A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

1900pF @ 25V

Power - Max

125W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.028 Ohms

Drain-source Breakdown Voltage

50 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

35 A

Power Dissipation

126 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFZ40

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ40

Manufacturer:

Quantity:

10 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ40

Manufacturer:

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

Part Number:

IRFZ40

Manufacturer:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ40FI

Manufacturer:

Quantity:

10 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ40FI

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

IRFZ40PBF

Quantity:

70 000

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