IRFBE30LPBF Vishay, IRFBE30LPBF Datasheet

MOSFET N-CH 800V 4.1A TO-262

IRFBE30LPBF

Manufacturer Part Number
IRFBE30LPBF
Description
MOSFET N-CH 800V 4.1A TO-262
Manufacturer
Vishay
Datasheets

Specifications of IRFBE30LPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.1 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
4.1A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBE30LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFBE30LPBF
Manufacturer:
SIPEX
Quantity:
20 000
Document Number: 91119
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
e
GS
GS
@ 10V
@ 10V
G
d
IRFBE30SPbF
IRFBE30LPbF
Min.
–––
–––
–––
HEXFET
300 (1.6mm from case )
10 lbf•in (1.1N•m)
S
IRFBE30S
D
-55 to + 150
D
2
Pak
Max.
Typ.
0.50
125
± 20
260
–––
–––
4.1
2.6
1.0
4.1
2.0
16
13
®
R
Power MOSFET
V
DS(on)
DSS
I
D
Max.
–––
1.0
62
= 4.1A
IRFBE30L
www.vishay.com
= 800V
TO-262
PD - 95507
= 3.0Ω
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRFBE30LPBF

IRFBE30LPBF Summary of contents

Page 1

... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance R Junction-to-Case θJC Case-to-Sink, Flat, Greased Surface R θCS R Junction-to-Ambient θJA Document Number: 91119 IRFBE30SPbF IRFBE30LPbF G Parameter @ 10V GS @ 10V Parameter Min 95507 ® HEXFET Power MOSFET 800V DSS R = 3.0Ω ...

Page 2

... See Fig. 6 & 400V 4. 12Ω 95Ω, See Fig Between lead, D 6mm (0.25in.) from package G and center of die contact 25V DS ƒ = 1.0MHz, See Fig. 5 Conditions MOSFET symbol D showing the integral reverse G p-n junction diode 25° 4.1A 25° 4. di/dt = 100A/µs www.vishay.com 2 ...

Page 3

... Document Number: 91119 www.vishay.com 3 ...

Page 4

... Document Number: 91119 www.vishay.com 4 ...

Page 5

... Document Number: 91119 www.vishay.com 5 ...

Page 6

... Document Number: 91119 www.vishay.com 6 ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent GS Document Number: 91119 + • • • • G • SD • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...

Page 8

... INTE RNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE Document Number: 91119 PART NUMB ER INT E RNAT IONAL IER F 530S LOGO DAT E CODE 2000 AS SE MBLY LOT CODE LINE L PART NUMBER F530S DATE CODE P = DES IGNATE S LEAD-FRE E PRODUCT (OPTIONAL 2000 EMBLY CODE www.vishay.com 8 ...

Page 9

... INT ERNAT IONAL RECT IFIER LOGO DAT E CODE YEAR 7 = 1997 AS S EMBLY WEEK CODE LINE C PART NUMBER INT ERNAT IONAL RECT IFIER LOGO DAT E CODE P = DES IGNAT ES LEAD-FREE AS S EMBLY PRODUCT (OPT IONAL) LOT CODE YEAR 7 = 1997 WEEK EMBLY CODE www.vishay.com 9 ...

Page 10

... Data and specifications subject to change without notice. 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) 4.72 (.136) 4.52 (.178) 27.40 (1.079) 23.90 (.941) 4 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 4 24.40 (.961) 3 TAC Fax: (310) 252-7903 07/04 www.vishay.com 10 ...

Page 11

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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