FDPF15N65 Fairchild Semiconductor, FDPF15N65 Datasheet - Page 3

• Manufacturer Part Number: FDPF15N65
• Description: MOSFET N-CH 650V 15A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF15N65

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3095pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 38.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP15N65 / FDPF15N65 Rev. B
Typical Performance Characteristics
5000
4000
3000
2000
1000
Figure 5. Capacitance Characteristics
10
Figure 3. On-Resistance Variation vs.
10
10
Figure 1. On-Region Characteristics
-1
1
0
10
0
1.0
0.8
0.6
0.4
0.2
0.0
10
-1
-1
Drain Current and Gate Voltage
Top :
Bottom :
0
10.0 V
15.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
10
C
oss
iss
rss
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
V
D
0
0
, Drain Current [A]
GS
20
= 10V
V
GS
30
= 20V
C
C
C
iss
oss
rss
= C
= C
= C
10
10
gs
gd
ds
1
+ C
* Notes :
+ C
1
* Note : T
1. 250
2. T
gd
gd
40
(C
C
* Note ;
= 25
ds
1. V
2. f = 1 MHz
μ
s Pulse Test
J
= shorted)
= 25
o
GS
C
= 0 V
o
C
50
3
10
10
12
10
10
10
8
6
4
2
0
1
0
Figure 2. Transfer Characteristics
1
0
Figure 4. Body Diode Forward Voltage
0.2
0
Figure 6. Gate Charge Characteristics
2
Variation vs. Source Current
0.4
150
10
4
25
o
C
o
C
V
and Temperatue
V
150
Q
GS
SD
G
, Gate-Source Voltage [V]
0.6
, Total Gate Charge [nC]
o
, Source-Drain voltage [V]
C
20
6
25
V
V
V
o
0.8
DS
DS
DS
C
-55
= 130V
= 325V
= 520V
o
C
8
30
1.0
* Notes :
* Notes :
1. V
2. 250
* Note : I
1. V
2. 250
10
GS
40
DS
μ
= 0V
s Pulse Test
μ
= 40V
1.2
D
s Pulse Test
www.fairchildsemi.com
= 15A
12
50
1.4