FDPF15N65 Fairchild Semiconductor, FDPF15N65 Datasheet - Page 5

• Manufacturer Part Number: FDPF15N65
• Description: MOSFET N-CH 650V 15A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF15N65

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3095pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 38.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP15N65 / FDPF15N65 Rev. B
Typical Performance Characteristics
Figure 11-1. Transient Thermal Response Curve for FDP15N65
Figure 11-2. Transient Thermal Response Curve for FDPF15N65
1 0
1 0
1 0
-1
-2
1 0
1 0
0
1 0
1 0
-1
-2
-5
0
1 0
D = 0 .5
-5
0 .0 5
0 .0 2
0 .0 1
0 .1
0 .2
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
0 .1
0 .2
1 0
1 0
-4
s in g le p u ls e
-4
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
t
1
s in g le p u ls e
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
-3
-3
(Continued)
5
1 0
1 0
-2
-2
* N o te s :
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
1 0
* N o te s :
-1
DM
1 . Z
2 . D u ty F a c to r , D = t
3 . T
-1
P
θ
J M
J C
DM
( t) = 0 .5
- T
θ
J M
J C
C
( t) = 3 .3
- T
= P
t
C
1
t
= P
2
D M
o
t
1
1 0
C /W M a x .
t
1 0
* Z
2
D M
o
0
C /W M a x .
0
θ
* Z
1
J C
/t
( t)
2
1
/t
θ
J C
2
( t)
1 0
1 0
1
1
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