MOSFET N-CH 1000V 1.4A TO-220AB

IRFBG20

Manufacturer Part NumberIRFBG20
DescriptionMOSFET N-CH 1000V 1.4A TO-220AB
ManufacturerVishay
IRFBG20 datasheet
 


Specifications of IRFBG20

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs11 Ohm @ 840mA, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C1.4AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs38nC @ 10VInput Capacitance (ciss) @ Vds500pF @ 25V
Power - Max54WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)11 Ohms
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current1.4 APower Dissipation54 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Fall Time31 nsMinimum Operating Temperature- 55 C
Rise Time17 nsLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFBG20  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 193 µH, R
DD
J
≤ 1.4 A, dI/dt ≤ 60 A/µs, V
≤ 600, T
c. I
SD
DD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91123
S-81262-Rev. A, 07-Jul-08
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
1000
• Repetitive Avalanche Rated
11
• Fast Switching
38
• Ease of Paralleling
4.9
• Simple Drive Requirements
22
• Lead (Pb)-free Available
Single
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The TO-220 package is universially preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
S
acceptance throughout the industry.
N-Channel MOSFET
TO-220
IRFBG20PbF
SiHFBG20-E3
IRFBG20
SiHFBG20
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 1.4 A (see fig. 12).
G
AS
≤ 150 °C.
J
IRFBG20, SiHFBG20
Vishay Siliconix
device
design,
low
on-resistance
SYMBOL
LIMIT
V
1000
DS
V
± 20
GS
1.4
I
D
0.86
I
5.6
DM
0.43
E
200
AS
I
1.4
AR
E
5.4
AR
P
54
D
dV/dt
1.0
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

IRFBG20 Summary of contents

  • Page 1

    ... IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 1.4 A (see fig. 12 ≤ 150 °C. J IRFBG20, SiHFBG20 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 1000 DS V ± 1 0.86 I 5.6 DM 0.43 E 200 AS I 1.4 ...

  • Page 2

    ... IRFBG20, SiHFBG20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91123 S-81262-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFBG20, SiHFBG20 Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRFBG20, SiHFBG20 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91123 S-81262-Rev. A, 07-Jul-08 ...

  • Page 5

    ... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91123 S-81262-Rev. A, 07-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFBG20, SiHFBG20 Vishay Siliconix D.U. d(on) r d(off www.vishay.com ...

  • Page 6

    ... IRFBG20, SiHFBG20 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91123 ...

  • Page 7

    ... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig. 14 -For N-Channel IRFBG20, SiHFBG20 Vishay Siliconix + + www.vishay.com 7 ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...