IRFBG20 Vishay, IRFBG20 Datasheet

MOSFET N-CH 1000V 1.4A TO-220AB

IRFBG20

Manufacturer Part Number
IRFBG20
Description
MOSFET N-CH 1000V 1.4A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRFBG20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 Ohm @ 840mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
31 ns
Minimum Operating Temperature
- 55 C
Rise Time
17 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBG20

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91123
S-81262-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 1.4 A, dI/dt ≤ 60 A/µs, V
= 50 V, starting T
(Ω)
TO-220
a
J
G
= 25 °C, L = 193 µH, R
D
S
c
a
a
DD
b
V
≤ 600, T
GS
= 10 V
G
J
N-Channel MOSFET
Single
≤ 150 °C.
1000
4.9
38
22
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
11
GS
AS
6-32 or M3 screw
at 10 V
= 1.4 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRFBG20PbF
SiHFBG20-E3
IRFBG20
SiHFBG20
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The TO-220 package is universially preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFBG20, SiHFBG20
design,
- 55 to + 150
LIMIT
1000
300
± 20
0.86
0.43
200
1.4
5.6
1.4
5.4
1.0
1.1
54
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFBG20 Summary of contents

Page 1

... IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 1.4 A (see fig. 12 ≤ 150 °C. J IRFBG20, SiHFBG20 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 1000 DS V ± 1 0.86 I 5.6 DM 0.43 E 200 AS I 1.4 ...

Page 2

... IRFBG20, SiHFBG20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91123 S-81262-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFBG20, SiHFBG20 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFBG20, SiHFBG20 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91123 S-81262-Rev. A, 07-Jul-08 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91123 S-81262-Rev. A, 07-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFBG20, SiHFBG20 Vishay Siliconix D.U. d(on) r d(off www.vishay.com ...

Page 6

... IRFBG20, SiHFBG20 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91123 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig. 14 -For N-Channel IRFBG20, SiHFBG20 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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