IRFBG20 Vishay, IRFBG20 Datasheet - Page 2

MOSFET N-CH 1000V 1.4A TO-220AB

IRFBG20

Manufacturer Part Number
IRFBG20
Description
MOSFET N-CH 1000V 1.4A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRFBG20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 Ohm @ 840mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
31 ns
Minimum Operating Temperature
- 55 C
Rise Time
17 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBG20

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IRFBG20, SiHFBG20
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
R
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
thCS
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
R
= 25 °C, I
DS
T
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= 10 V
= 10 V
= 18 Ω, R
= 25 °C, I
= 800 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
DS
TYP.
DS
DD
TEST CONDITIONS
0.50
DS
GS
-
-
= 1000 V, V
= 50 V, I
= 500 V, I
F
= V
= 0 V, I
V
V
= 1.4 A, dI/dt = 100 A/µs
V
GS
D
DS
S
GS
I
GS
GS
D
= 370 Ω, see fig. 10
= 1.4 A, V
= ± 20 V
, I
= 25 V,
= 1.4 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
I
D
= 250 µA
= 0.84 A
D
GS
= 1.4 A,
= 0.84 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
G
= 0 V
b
= 400 V,
b
MAX.
D
S
b
b
D
S
2.3
b
62
-
b
MIN.
1000
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91123
S-81262-Rev. A, 07-Jul-08
TYP.
0.46
500
130
1.2
9.4
4.5
7.5
52
17
17
58
31
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.69
S
100
500
190
4.0
4.9
1.4
5.6
1.5
11
38
22
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V

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