MOSFET N-CH 1000V 3.1A TO-220AB

IRFBG30

Manufacturer Part NumberIRFBG30
DescriptionMOSFET N-CH 1000V 3.1A TO-220AB
ManufacturerVishay
IRFBG30 datasheet
 


Specifications of IRFBG30

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id3.1ADrain Source Voltage Vds1kV
On Resistance Rds(on)5ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFBG30  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220AB
G
D
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 55 mH, R
DD
J
≤ 3.1 A, dI/dt ≤ 80 A/μs, V
≤ 600, T
c. I
SD
DD
J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91124
S11-0517-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
1000
• Repetitive Avalanche Rated
5.0
• Fast Switching
80
• Ease of Paralleling
10
• Simple Drive Requirements
42
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
S
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRFBG30PbF
SiHFBG30-E3
IRFBG30
SiHFBG30
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
dV/dt
T
J
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 3.1 A (see fig. 12).
g
AS
≤ 150 °C.
This datasheet is subject to change without notice.
IRFBG30, SiHFBG30
Vishay Siliconix
RoHS*
COMPLIANT
device
design,
low
on-resistance
LIMIT
UNIT
V
1000
DS
V
V
± 20
GS
3.1
I
D
2.0
A
I
12
DM
1.0
W/°C
E
280
mJ
AS
I
3.1
A
AR
E
13
mJ
AR
P
125
W
D
1.0
V/ns
, T
- 55 to + 150
stg
°C
d
300
10
lbf · in
1.1
N · m
www.vishay.com
www.vishay.com/doc?91000
Available
and
1

IRFBG30 Summary of contents

  • Page 1

    ... C SYMBOL ° 100 ° °C C dV/ for screw = 25 Ω 3.1 A (see fig. 12 ≤ 150 °C. This datasheet is subject to change without notice. IRFBG30, SiHFBG30 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 1000 ± 3 2 1.0 W/° ...

  • Page 2

    ... IRFBG30, SiHFBG30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... Document Number: 91124 S11-0517-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFBG30, SiHFBG30 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

  • Page 4

    ... IRFBG30, SiHFBG30 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91124 S11-0517-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFBG30, SiHFBG30 Vishay Siliconix D.U. ...

  • Page 6

    ... IRFBG30, SiHFBG30 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig. 12b - Unclamped Inductive Waveforms Fig ...

  • Page 7

    ... D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level device Fig For N-Channel This datasheet is subject to change without notice. IRFBG30, SiHFBG30 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...