MOSFET N-CH 1000V 3.1A TO-220AB

IRFBG30

Manufacturer Part NumberIRFBG30
DescriptionMOSFET N-CH 1000V 3.1A TO-220AB
ManufacturerVishay
IRFBG30 datasheet
 


Specifications of IRFBG30

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id3.1ADrain Source Voltage Vds1kV
On Resistance Rds(on)5ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFBG30  
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IRFBG30, SiHFBG30
Vishay Siliconix
L
V
DS
Vary t
to obtain
p
required I
AS
D.U.T
R
G
I
AS
10 V
0.01 Ω
t
p
Fig. 12a - Unclamped Inductive Test Circuit
Q
G
10 V
Q
Q
GS
GD
V
G
Charge
Fig. 13a - Basic Gate Charge Waveform
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6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
+
V
-
DD
V
DS
A
I
AS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
This datasheet is subject to change without notice.
V
DS
t
p
V
DD
Current regulator
Same type as D.U.T.
50 kΩ
0.2 µF
0.3 µF
+
V
DS
D.U.T.
-
V
GS
3 mA
I
I
G
D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Document Number: 91124
S11-0517-Rev. B, 21-Mar-11
www.vishay.com/doc?91000