IRFR110 Vishay, IRFR110 Datasheet
IRFR110
Specifications of IRFR110
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IRFR110 Summary of contents
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... Halogen-free According to IEC 61249-2-21 100 Definition • Dynamic dV/dt Rating 0.54 • Repetitive Avalanche Rated 8.3 • Surface Mount (IRFR110, SiHFR110) 2.3 • Available in Tape and Reel 3.8 • Fast Switching • Ease of Paralleling Single • Compliant to RoHS Directive 2002/95/EC ...
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... IRFR110, SiHFR110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91265 S10-1122-Rev. E, 10-May- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFR110, SiHFR110 Vishay Siliconix www.vishay.com 3 ...
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... IRFR110, SiHFR110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91265 S10-1122-Rev. E, 10-May-10 ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91265 S10-1122-Rev. E, 10-May- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFR110, SiHFR110 Vishay Siliconix D.U. d(on) d(off www.vishay.com ...
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... IRFR110, SiHFR110 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91265 ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFR110, SiHFR110 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...