IRFR110 Vishay, IRFR110 Datasheet

MOSFET N-CH 100V 4.3A DPAK

IRFR110

Manufacturer Part Number
IRFR110
Description
MOSFET N-CH 100V 4.3A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR110

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
540 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.3nC @ 10V
Input Capacitance (ciss) @ Vds
180pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
4.3A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
540mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFR110

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR110
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRFR110
Manufacturer:
ST
0
Part Number:
IRFR110
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFR110A
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFR110A
Quantity:
150
Part Number:
IRFR110PBF
Manufacturer:
VISHAY
Quantity:
17 114
Part Number:
IRFR110TF
Manufacturer:
VISHAY
Quantity:
40 200
Part Number:
IRFR110TR
Manufacturer:
IR
Quantity:
4 452
Part Number:
IRFR110TRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFR110TRPBF
Quantity:
62 000
Company:
Part Number:
IRFR110TRPBF
Quantity:
12 000
Company:
Part Number:
IRFR110TRPBF
Quantity:
15 045
Company:
Part Number:
IRFR110TRPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91265
S10-1122-Rev. E, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 5.6 A, dI/dt ≤ 75 A/μs, V
= 25 V, starting T
(Ω)
(TO-252)
D
DPAK
G
a
S
J
= 25 °C, L = 8.1 mH, R
c
a
a
DD
b
V
≤ V
GS
e
DS
= 10 V
DPAK (TO-252)
SiHFR110-GE3
IRFR110PbF
SiHFR110-E3
IRFR110
SiHFR110
G
, T
N-Channel MOSFET
J
e
≤ 150 °C.
Single
100
8.3
2.3
3.8
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
0.54
GS
AS
at 10 V
= 4.3 A (see fig. 12).
T
T
C
A
for 10 s
DPAK (TO-252)
SiHFR110TRL-GE3
IRFR110TRLPbF
SiHFR110TL-E3
IRFR110TRL
SiHFR110TL
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR110, SiHFR110)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. Power
dissipation levels up to 1.5 W are possible in typical surface
mount applications.
Definition
a
a
a
a
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
DPAK (TO-252)
SiHFR110TR-GE3
IRFR110TRPbF
SiHFR110T-E3
IRFR110TR
SiHFR110T
stg
IRFR110, SiHFR110
design,
a
a
- 55 to + 150
a
a
LIMIT
0.020
260
± 20
0.20
100
4.3
2.7
4.3
2.5
2.5
5.5
17
75
25
low
Vishay Siliconix
d
DPAK (TO-252)
SiHFR110TRR-GE3
IRFR110TRRPbF
SiHFR110TR-E3
-
-
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
a
a
and
1

Related parts for IRFR110

IRFR110 Summary of contents

Page 1

... Halogen-free According to IEC 61249-2-21 100 Definition • Dynamic dV/dt Rating 0.54 • Repetitive Avalanche Rated 8.3 • Surface Mount (IRFR110, SiHFR110) 2.3 • Available in Tape and Reel 3.8 • Fast Switching • Ease of Paralleling Single • Compliant to RoHS Directive 2002/95/EC ...

Page 2

... IRFR110, SiHFR110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91265 S10-1122-Rev. E, 10-May- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFR110, SiHFR110 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR110, SiHFR110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91265 S10-1122-Rev. E, 10-May-10 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91265 S10-1122-Rev. E, 10-May- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFR110, SiHFR110 Vishay Siliconix D.U. d(on) d(off www.vishay.com ...

Page 6

... IRFR110, SiHFR110 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91265 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFR110, SiHFR110 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords