IRFIBE20G Vishay, IRFIBE20G Datasheet
IRFIBE20G
Specifications of IRFIBE20G
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IRFIBE20G Summary of contents
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... TO-220 FULLPAK IRFIBE20GPbF SiHFIBE20G-E3 IRFIBE20G SiHFIBE20G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 1.4 A (see fig. 12 ≤ 150 °C. J IRFIBE20G, SiHFIBE20G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V 800 DS V ± 1 0.86 I 5.6 DM 0.24 E 180 ...
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... IRFIBE20G, SiHFIBE20G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91183 S-81275-Rev. A, 16-Jun-08 IRFIBE20G, SiHFIBE20G = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...
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... IRFIBE20G, SiHFIBE20G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91183 S-81275-Rev. A, 16-Jun-08 ...
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... Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91183 S-81275-Rev. A, 16-Jun-08 IRFIBE20G, SiHFIBE20G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...
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... IRFIBE20G, SiHFIBE20G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91183 ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRFIBE20G, SiHFIBE20G Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...