IRFB11N50A Vishay, IRFB11N50A Datasheet

IRFB11N50A

Manufacturer Part Number

IRFB11N50A

Description

MOSFET N-CH 500V 11A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRFB11N50A.pdf (8 pages)

2.IRFB11N50A.pdf (8 pages)

3.IRFB11N50A.pdf (8 pages)

Specifications of IRFB11N50A

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

520 mOhm @ 6.6A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

11A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

52nC @ 10V

Input Capacitance (ciss) @ Vds

1423pF @ 25V

Power - Max

170W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.52 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

11 A

Power Dissipation

170 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFB11N50A

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91094

S-81243-Rev. B, 21-Jul-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ 11 A, dI/dt ≤ 140 A/µs, V

(Ω)

TO-220

= 25 °C, L = 4.5 mH, R

≤ V

= 10 V

= 25 Ω, I

, T

N-Channel MOSFET

Single

≤ 150 °C.

500

= 11 A (see fig. 12).

Power MOSFET

= 25 °C, unless otherwise noted

0.52

6-32 or M3 screw

at 10 V

for 10 s

= 25 °C

TO-220

IRFB11N50APbF

SiHFB11N50A-E3

IRFB11N50A

SiHFB11N50A

= 100 °C

= 25 °C

FEATURES

• Low Gate Charge Q

• Improved Gate, Avalanche and Dynamic dV/dt

• Fully

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

APPLICABLE OFF LINE SMPS TOPOLOGIES

• Two Transistor Forward

• Half and Full Bridge

• Power Factor Correction Boost

Requirement

Ruggedness

Avalanche Voltage and current

IRFB11N50A, SiHFB11N50A

SYMBOL

Characterized

dV/dt

, T

stg

Results in Simple Drive

- 55 to + 150

Capacitance

LIMIT

300

± 30

500

275

170

7.0

1.3

6.9

1.1

Vishay Siliconix

www.vishay.com

and

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

°C

Available

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