IRF9540 Vishay, IRF9540 Datasheet

MOSFET P-CH 100V 19A TO-220AB

IRF9540

Manufacturer Part Number
IRF9540
Description
MOSFET P-CH 100V 19A TO-220AB
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF9540

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
P Channel
Continuous Drain Current Id
-19A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.2Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
19A
Power Dissipation
150W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
57 ns
Minimum Operating Temperature
- 55 C
Rise Time
73 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRF9540

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91078
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 - 19 A, dI/dt  200 A/μs, V
= - 25 V, starting T
TO-220AB
()
G
D
a
S
J
= 25 °C, L = 2.7 mH, R
c
a
a
V
b
GS
DD
= - 10 V
 V
DS
G
, T
P-Channel MOSFET
Single
- 100
J
61
14
29
 175 °C.
This datasheet is subject to change without notice.
g
C
= 25 , I
S
D
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.20
GS
at - 10 V
6-32 or M3 screw
AS
T
= - 19 A (see fig. 12).
C
for 10 s
= 25 °C
T
T
C
C
TO-220AB
IRF9540PbF
SiHF9540-E3
IRF9540
SiHF9540
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
design,
IRF9540, SiHF9540
- 55 to + 175
LIMIT
- 100
300
± 20
- 5.5
- 19
- 13
- 72
- 19
640
150
1.0
1.1
15
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF9540 Summary of contents

Page 1

... C SYMBOL ° 100 ° ° for screw = 25  (see fig. 12  175 °C. J This datasheet is subject to change without notice. IRF9540, SiHF9540 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V - 100 DS V ± 1.0 W/°C ...

Page 2

... IRF9540, SiHF9540 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... °C 91078_03 = 25 °C C 3.0 2.5 2.0 1.5 1.0 - 4.5 V 0.5 = 175 °C 0.0 91078_04 = 175 ° C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF9540, SiHF9540 Vishay Siliconix ° ° 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...

Page 4

... IRF9540, SiHF9540 Vishay Siliconix 3000 MHz iss gs 2500 rss oss ds 2000 1500 1000 500 Drain-to-Source Voltage ( 91078_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91078_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 150 175 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF9540, SiHF9540 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRF9540, SiHF9540 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91078_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel This datasheet is subject to change without notice. IRF9540, SiHF9540 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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