SUM85N15-19-E3 Vishay, SUM85N15-19-E3 Datasheet
SUM85N15-19-E3
Specifications of SUM85N15-19-E3
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SUM85N15-19-E3 Summary of contents
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... PRODUCT SUMMARY V (V) r (BR)DSS DS(on) 150 0.019 @ V GS TO-263 Top View Ordering Information: SUM85N15-19 SUM85N15-19-E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy ...
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... SUM85N15-19 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... C oss − Drain-to-Source Voltage (V) DS Document Number: 71703 S-32523—Rev. B, 08-Dec- −55_C C 25_C 125_C 80 100 120 100 125 150 SUM85N15-19 Vishay Siliconix Transfer Characteristics 180 150 120 125_C C 30 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 0.04 0.03 0. ...
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... SUM85N15-19 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.4 D 2.0 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 100 10 1 100 ...
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... Document Number: 71703 S-32523—Rev. B, 08-Dec-03 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case −2 10 Square Wave Pulse Duration (sec) SUM85N15-19 Vishay Siliconix Safe Operating Area Limited by r DS(on 100 100 25_C C Single Pulse 0.1 1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...