SUM85N15-19-E3 Vishay, SUM85N15-19-E3 Datasheet

MOSFET N-CH 150V 85A D2PAK

SUM85N15-19-E3

Manufacturer Part Number
SUM85N15-19-E3
Description
MOSFET N-CH 150V 85A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM85N15-19-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4750pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
85A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
3.75W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM85N15-19-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM85N15-19-E3
Manufacturer:
HITACHI
Quantity:
1 928
Part Number:
SUM85N15-19-E3
Manufacturer:
VISHAY
Quantity:
30 000
Company:
Part Number:
SUM85N15-19-E3
Quantity:
70 000
Notes
a.
b.
c.
d.
Document Number: 71703
S-32523—Rev. B, 08-Dec-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case (Drain)
V
Package limited.
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
150
Ordering Information: SUM85N15-19
(V)
G
Top View
TO-263
J
J
b
b
b
D
= 175_C)
= 175_C)
SUM85N15-19-E3 (Lead Free)
N-Channel 150-V (D-S) 175_C MOSFET
S
0.019 @ V
Parameter
Parameter
r
DS(on)
GS
(W)
= 10 V
PCB Mount (TO-263)
T
L = 0.1 mH
T
T
T
C
A
C
C
C
= 125_C
= 25_C
= 25_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
d
I
D
G
85
d
(A)
a
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
GS
DS
AR
D
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D New Low Thermal Resistance Package
D 100% R
APPLICATIONS
D Primary Side Switch
D Automotive
− 42-V EPS and ABS
− DC/DC Conversion
− Motor Drives
g
Tested
−55 to 175
Limit
Limit
"20
375
3.75
150
180
125
85
50
0.4
50
40
a
a
c
Vishay Siliconix
SUM85N15-19
www.vishay.com
Unit
Unit
_C/W
_C/W
mJ
_C
W
W
V
A
A
1

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SUM85N15-19-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) r (BR)DSS DS(on) 150 0.019 @ V GS TO-263 Top View Ordering Information: SUM85N15-19 SUM85N15-19-E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy ...

Page 2

... SUM85N15-19 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C oss − Drain-to-Source Voltage (V) DS Document Number: 71703 S-32523—Rev. B, 08-Dec- −55_C C 25_C 125_C 80 100 120 100 125 150 SUM85N15-19 Vishay Siliconix Transfer Characteristics 180 150 120 125_C C 30 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current 0.04 0.03 0. ...

Page 4

... SUM85N15-19 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.4 D 2.0 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 100 10 1 100 ...

Page 5

... Document Number: 71703 S-32523—Rev. B, 08-Dec-03 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case −2 10 Square Wave Pulse Duration (sec) SUM85N15-19 Vishay Siliconix Safe Operating Area Limited by r DS(on 100 100 25_C C Single Pulse 0.1 1 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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