FDP8030L Fairchild Semiconductor, FDP8030L Datasheet
FDP8030L
Manufacturer Part Number
FDP8030L
Description
MOSFET N-CH 30V 80A TO220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDB8030L.pdf
(5 pages)
Specifications of FDP8030L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 5V
Input Capacitance (ciss) @ Vds
10500pF @ 15V
Power - Max
187W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
170 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
187000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP8030L
Manufacturer:
FSC
Quantity:
45 000
Company:
Part Number:
FDP8030L
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDP8030L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
R
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
R
DS(on)
D
J
L
DSS
GSS
D
, T
G
JC
JA
STG
D
specifications.
S
converters
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation @# T
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
using
either
– Continuous
– Pulsed
TO-220
FDP Series
Parameter
synchronous
C
= 25 C
G
T
Derate above 25 C
A
=25
S
or
o
C unless otherwise noted
(Note 1)
(Note 1)
MOSFET
Features
TO-263AB
FDB Series
D
80 A, 30 V.
Critical DC electrical parameters specified at
Rugged internal source-drain diode can eliminate the
High performance trench technology for extremely
175 C maximum junction temperature rating
elevated temperature
need for an external Zener diode transient
suppressor
low R
DS(ON)
R
R
DS(ON)
DS(ON)
-65 to +175
Ratings
1.25
62.5
300
187
275
0.8
30
80
20
= 0.0035
= 0.0045
G
November 1999
@ V
@ V
D
S
GS
GS
FDP8030L Rev C(W)
= 10 V
= 4.5 V
Units
W C
C/W
C/W
W
V
V
A
C
C
Related parts for FDP8030L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDP8030L Summary of contents
Page 1
... DS(ON) 175 C maximum junction temperature rating TO-263AB FDB Series o T =25 C unless otherwise noted A (Note 1) (Note Derate above 25 C November 1999 R = 0.0035 @ DS(ON 0.0045 @ V = 4.5 V DS(ON Ratings Units 300 187 W 1. -65 to +175 C 275 C 0.8 C/W 62.5 C/W FDP8030L Rev C(W) ...
Page 2
... D T =125 4 1.0 MHz 4 GEN (Note 1) (Note (Note Min Typ Max Units 1500 mV 100 nA –100 –5 mV/ C 3.1 3.5 m 4.0 5.6 3.6 4 170 S 10500 pF 2700 pF 1650 185 225 ns 160 200 ns 200 240 ns 120 170 300 A 1 1.3 V FDP8030L Rev C(W) ...
Page 3
... Source Current and Temperature. 3.0V 3.5V 4.5V 6.0V 10V 100 I , DRAIN CURRENT ( 40A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C A 25°C -55° 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP8030L Rev C(W) 120 8 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0 ,TIME (ms iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 0.8°C 25° 100 300 1,000 SINGLE PULSE TIME (mSEC) Power Dissipation. R ( 0.8 °C/W JC P(pk ( Duty Cycle 100 500 1000 FDP8030L Rev C(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...