IRFR420 Vishay, IRFR420 Datasheet

MOSFET N-CH 500V 2.4A DPAK

IRFR420

Manufacturer Part Number
IRFR420
Description
MOSFET N-CH 500V 2.4A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR420

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.4 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFR420

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0
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91275
S10-1135-Rev. C, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 2.4 A, dI/dt ≤ 50 A/μs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 124 mH, R
G
c
D S
a
a
DD
b
V
≤ V
GS
DPAK (TO-252)
SiHFR420-GE3
IRFR420PbF
SiHFR420-E3
IRFR420
SiHFR420
e
DS
= 10 V
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
500
3.3
19
13
g
C
= 25 Ω, I
D
S
= 25 °C, unless otherwise noted
Power MOSFET
DPAK (TO-252)
SiHFR420TR-GE3
IRFR420TRPbF
SiHFR420T-E3
IRFR420TR
SiHFR420T
V
IRFR420, IRFU420, SiHFR420, SiHFU420
3.0
GS
AS
at 10 V
= 2.4 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
a
a
T
a
T
a
C
C
= 100 °C
a
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR420, SiHFR420)
• Straight Lead (IRFU420, SiHFU420)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
DPAK (TO-252)
SiHFR420TRL-GE3
IRFR420TRLPbF
SiHFR420TL-E3
IRFR420TRL
SiHFR420TL
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
a
a
I
AR
GS
DS
AS
AR
D
D
stg
a
a
a
design,
DPAK (TO-252)
SiHFR420TRR-GE3
IRFR420TRRPbF
-
IRFR420TRR
-
- 55 to + 150
LIMIT
0.020
260
± 20
0.33
500
400
2.4
1.5
8.0
2.4
4.2
2.5
3.5
42
low
a
Vishay Siliconix
d
a
on-resistance
a
IPAK (TO-251)
SiHFU420-GE3
IRFU420PbF
SiHFU420-E3
IRFU420
SiHFU420
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFR420 Summary of contents

Page 1

... Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 500 Definition • Dynamic dV/dt Rating 3.0 • Repetitive Avalanche Rated 19 • Surface Mount (IRFR420, SiHFR420) 3.3 • Straight Lead (IRFU420, SiHFU420) 13 • Available in Tape and Reel Single • Fast Switching • Ease of Paralleling D • ...

Page 2

... IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1” square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91275 S10-1135-Rev. C, 10-May-10 IRFR420, IRFU420, SiHFR420, SiHFU420 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91275 S10-1135-Rev. C, 10-May-10 ...

Page 5

... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91275 S10-1135-Rev. C, 10-May-10 IRFR420, IRFU420, SiHFR420, SiHFU420 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91275 S10-1135-Rev ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91275. Document Number: 91275 S10-1135-Rev. C, 10-May-10 IRFR420, IRFU420, SiHFR420, SiHFU420 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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