FQA62N25C Fairchild Semiconductor, FQA62N25C Datasheet - Page 2

MOSFET N-CH 250V 62A TO-3P

FQA62N25C

Manufacturer Part Number
FQA62N25C
Description
MOSFET N-CH 250V 62A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA62N25C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
6280pF @ 25V
Power - Max
298W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
55 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
62 A
Power Dissipation
298000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
62A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
35mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA62N25C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQA62N25C
Manufacturer:
FSC
Quantity:
86 755
Part Number:
FQA62N25C
Manufacturer:
FAIRCHILD
Quantity:
2 644
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.96mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 62A, di/dt ≤ 300A/µs, V
DSS
∆T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 62A, V
DD
= 50V, R
DD
≤ BV
Parameter
DSS,
G
= 25 Ω, Starting T
Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
/ dt = 100 A/µs
= 25 Ω
= 10 V, I
= 250 V, V
= 200 V, T
= V
= 40 V, I
= 25 V, V
= 200 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 125 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
D
S
S
D
D
= 31 A
= 250 µA
= 62 A
= 62 A,
GS
DS
D
D
= 250 µA
DS
= 31 A
GS
C
= 62 A,
= 62 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4)
(Note 4)
(Note 4)
(Note 4)
Min
250
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.029
4830
0.28
63.5
25.5
4.77
Typ
945
395
245
335
100
340
55
75
39
--
--
--
--
--
--
--
--
--
0.035
6280
1230
-100
Max
100
100
160
800
500
680
130
248
4.0
1.5
62
10
83
--
--
--
--
--
--
--
Rev. A, March 2004
Units
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V

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