FQA62N25C Fairchild Semiconductor, FQA62N25C Datasheet - Page 3

• Manufacturer Part Number: FQA62N25C
• Description: MOSFET N-CH 250V 62A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA62N25C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 6280pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 55 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 298000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 62A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10000
8000
6000
4000
2000
10
10
10
2
1
0
10
0.15
0.12
0.09
0.06
0.03
0.00
0
10
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 4.5 V
-1
Figure 3. On-Resistance Variation vs
0
Figure 1. On-Region Characteristics
※
1. V
2. f = 1 MHz
Notes :
Drain Current and Gate Voltage
GS
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
= 0 V
V
GS
50
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
100
10
10
I
0
D
0
, Drain Current [A]
C
C
C
oss
rss
iss
V
150
GS
= 10V
200
C
C
C
iss
oss
rss
= C
= C
= C
10
10
gs
※
gd
ds
1
1
※
+ C
1. 250µ s Pulse Test
2. T
+ C
Notes :
Note : T
gd
gd
C
250
(C
= 25 ℃
ds
V
GS
J
= shorted)
= 25 ℃
= 20V
300
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
2
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
0.4
25
Variation with Source Current
o
C
20
150
150 ℃
0.6
o
C
4
V
V
25 ℃
Q
GS
SD
and Temperature
G
40
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
0.8
DS
V
= 200V
DS
= 125V
V
-55
1.0
DS
60
6
o
C
= 50V
1.2
80
※
※
1. V
2. 250µ s Pulse Test
Notes :
1. V
2. 250µ s Pulse Test
1.4
Notes :
※
8
DS
GS
Note : I
= 40V
= 0V
100
D
1.6
= 62A
Rev. A, March 2004
120
10
1.8