FQA62N25C Fairchild Semiconductor, FQA62N25C Datasheet - Page 4

• Manufacturer Part Number: FQA62N25C
• Description: MOSFET N-CH 250V 62A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA62N25C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 6280pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 55 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 298000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 62A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 35mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
3
2
1
0
10
Figure 9. Maximum Safe Operating Area
0
Figure 7. Breakdown Voltage Variation
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
-50
o
C
o
C
T
V
Operation in This Area
is Limited by R
J
DS
, Junction Temperature [
vs Temperature
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
10
1
-1
-2
0
1 0
-5
DS(on)
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
0 .1
50
0 .2
DC
10 ms
Figure 11. Transient Thermal Response Curve
100
1 0
1 ms
(Continued)
o
C]
-4
s in g le p u ls e
10
※
100
1. V
2. I
t
2
Notes :
1
D
10
µ
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 µA
s
150
= 0 V
µ
s
1 0
- 3
200
1 0
-2
70
60
50
40
30
20
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
-100
※
1 0
1 . Z
2 . D u ty F a c to r , D = t
3 . T
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
N o te s :
-1
θ
J M
J C
P
-50
( t ) = 0 .4 2
- T
DM
50
C
= P
vs Case Temperature
T
T
D M
J
, Junction Temperature [
C
t
vs Temperature
1 0
℃
1
, Case Temperature [ ]
0
* Z
t
2
/W M a x .
0
1
75
/t
θ
J C
2
( t)
50
100
1 0
1
100
℃
o
C]
125
※
1. V
2. I
150
Notes :
D
GS
= 31 A
= 10 V
150
200
Rev.A, March 2004