MOSFET N-CH 250V 14A TO-220AB

IRF644

Manufacturer Part NumberIRF644
DescriptionMOSFET N-CH 250V 14A TO-220AB
ManufacturerVishay
IRF644 datasheet
 

Specifications of IRF644

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs280 mOhm @ 8.4A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C14AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs68nC @ 10VInput Capacitance (ciss) @ Vds1300pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Drain Source Voltage Vds250VRds(on) Test Voltage Vgs10V
Peak Reflow Compatible (260 C)NoDrain Source On Resistance @ 10v280mohm
Thermal Resistance1°C/WCurrent Rating14A
ConfigurationSingleResistance Drain-source Rds (on)0.28 Ohms
Drain-source Breakdown Voltage250 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current14 APower Dissipation125 W
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF644  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 4.5 mH, R
DD
J
≤ 14 A, dI/dt ≤ 150 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91039
S-81241-Rev. B, 07-Jul-08
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
250
• Repetitive Avalanche Rated
0.28
• Fast Switching
68
• Ease of Paralleling
11
• Simple Drive Requirements
35
Single
• Lead (Pb)-free Available
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
S
and low package cost of the TO-220 contribute to its wide
N-Channel MOSFET
acceptance throughout the industry.
TO-220
IRF644PbF
SiHF644-E3
IRF644
SiHF644
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 14 A (see fig. 12).
G
AS
≤ 150 °C.
, T
J
IRF644, SiHF644
Vishay Siliconix
device
design,
low
on-resistance
SYMBOL
LIMIT
V
250
DS
V
± 20
GS
14
I
D
8.5
I
56
DM
1.0
E
550
AS
I
14
AR
E
13
AR
P
125
D
dV/dt
4.8
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

IRF644 Summary of contents

  • Page 1

    ... TO-220 IRF644PbF SiHF644-E3 IRF644 SiHF644 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 150 ° IRF644, SiHF644 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 250 DS V ± 8 1.0 E 550 ...

  • Page 2

    ... IRF644, SiHF644 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91039 S-81241-Rev. B, 07-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF644, SiHF644 Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRF644, SiHF644 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91039 S-81241-Rev. B, 07-Jul-08 ...

  • Page 5

    ... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91039 S-81241-Rev. B, 07-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRF644, SiHF644 Vishay Siliconix D.U. d(off www.vishay.com 5 ...

  • Page 6

    ... IRF644, SiHF644 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91039 ...

  • Page 7

    ... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF644, SiHF644 Vishay Siliconix + + www.vishay.com 7 ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...