IRFIBF30G Vishay, IRFIBF30G Datasheet

MOSFET N-CH 900V 1.9A TO220FP

IRFIBF30G

Manufacturer Part Number
IRFIBF30G
Description
MOSFET N-CH 900V 1.9A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFIBF30G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFIBF30G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFIBF30G
Manufacturer:
IR
Quantity:
32 500
Part Number:
IRFIBF30G
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFIBF30G
Quantity:
20 500
Part Number:
IRFIBF30GPBF
Manufacturer:
VISHAY
Quantity:
3 000
Company:
Part Number:
IRFIBF30GPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91186
S09-0063-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 3.6 A, dI/dt ≤ 70 A/µs, V
= 50 V, starting T
(Ω)
a
J
G
= 25 °C, L = 115 mH, R
D
c
a
a
S
DD
b
V
≤ 600, T
GS
= 10 V
G
N-Channel MOSFET
J
Single
≤ 150 °C.
900
78
10
42
G
D
S
= 25 Ω, I
C
Power MOSFET
= 25 °C, unless otherwise noted
V
3.7
GS
6-32 or M3 screw
at 10 V
AS
= 1.9 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFIBF30GPbF
SiHFIBF30G-E3
IRFIBF30G
SiHFIBF30G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
IRFIBF30G, SiHFIBF30G
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
- 55 to + 150
LIMIT
300
± 20
0.28
900
220
1.9
1.2
7.6
1.9
3.5
1.5
1.1
35
10
low
RMS
Vishay Siliconix
d
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFIBF30G Summary of contents

Page 1

... TO-220 FULLPAK IRFIBF30GPbF SiHFIBF30G-E3 IRFIBF30G SiHFIBF30G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 1.9 A (see fig. 12 ≤ 150 °C. J IRFIBF30G, SiHFIBF30G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V 900 DS V ± 1 1.2 I 7.6 DM 0.28 E 220 ...

Page 2

... IRFIBF30G, SiHFIBF30G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 IRFIBF30G, SiHFIBF30G = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFIBF30G, SiHFIBF30G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 ...

Page 5

... Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 IRFIBF30G, SiHFIBF30G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFIBF30G, SiHFIBF30G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91186 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRFIBF30G, SiHFIBF30G Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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