IRFBF30 Vishay, IRFBF30 Datasheet
IRFBF30
Specifications of IRFBF30
Available stocks
Related parts for IRFBF30
IRFBF30 Summary of contents
Page 1
... TO-220 IRFBF30PbF SiHFBF30-E3 IRFBF30 SiHFBF30 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 3.6 A (see fig. 12 ≤ 150 °C. J IRFBF30, SiHFBF30 Vishay Siliconix device design, low on-resistance SYMBOL LIMITE V 900 DS V ± 3 2 1.0 E 250 AS I 3.6 ...
Page 2
... IRFBF30, SiHFBF30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91122 S09-0014-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFBF30, SiHFBF30 Vishay Siliconix www.vishay.com 3 ...
Page 4
... IRFBF30, SiHFBF30 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91122 S09-0014-Rev. A, 19-Jan-09 ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91122 S09-0014-Rev. A, 19-Jan- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFBF30, SiHFBF30 Vishay Siliconix D.U. d(on) r d(off www.vishay.com ...
Page 6
... IRFBF30, SiHFBF30 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91122 ...
Page 7
... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level 3 V drive devices Fig. 14 -For N-Channel IRFBF30, SiHFBF30 Vishay Siliconix + + www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...