IRFI840G Vishay, IRFI840G Datasheet
IRFI840G
Specifications of IRFI840G
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IRFI840G Summary of contents
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... TO-220 FULLPAK IRFI840GPbF SiHFI840G-E3 IRFI840G SiHFI840G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 4.6 A (see fig. 12 ≤ 150 ° IRFI840G, SiHFI840G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V 500 DS V ± 4 2 0.32 E 370 ...
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... IRFI840G, SiHFI840G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91161 S09-0011-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI840G, SiHFI840G Vishay Siliconix www.vishay.com 3 ...
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... IRFI840G, SiHFI840G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91161 S09-0011-Rev. A, 19-Jan-09 ...
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... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91161 S09-0011-Rev. A, 19-Jan-09 IRFI840G, SiHFI840G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...
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... IRFI840G, SiHFI840G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91161 S09-0011-Rev ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFI840G, SiHFI840G Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...