IRFIB5N65APBF Vishay, IRFIB5N65APBF Datasheet

MOSFET N-CH 650V 5.1A TO220FP

IRFIB5N65APBF

Manufacturer Part Number
IRFIB5N65APBF
Description
MOSFET N-CH 650V 5.1A TO220FP
Manufacturer
Vishay
Series
HEXFET®r

Specifications of IRFIB5N65APBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
930 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
5.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
1417pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.93 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.1 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
5.1A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
930mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFIB5N65APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFIB5N65APBF
Quantity:
15 000
Document Number: 91174
l
l
l
l
l
l
l
l
Typical SMPS Topologies
l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
Notes 
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@T
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Single Transistor Flyback
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
High Voltage Isolation = 2.5KVRMS†
Lead-Free
Single Transistor Forward
C
C
C
= 25°C
= 100°C
= 25°C
through †are on page 8
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
650V
IRFIB5N65APbF
DSS
TO-220 Full-Pak
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
R
Max.
0.48
± 30
5.1
3.2
2.8
21
60
DS(on)
0.93Ω
®
Power MOSFET
max
G
www.vishay.com
D
S
PD-94837
Units
W/°C
V/ns
5.1A
°C
W
A
V
I
D
1

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IRFIB5N65APBF Summary of contents

Page 1

... STG Soldering Temperature, for 10 seconds Mounting torqe, 6- screw Typical SMPS Topologies Single Transistor Flyback l Single Transistor Forward l Notes  through †are on page 8 Document Number: 91174 SMPS MOSFET IRFIB5N65APbF HEXFET V DSS 650V TO-220 Full-Pak @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) PD-94837 ® ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA† 3.1.A „ 250µ 0V 125° Conditions = 3.1A D „ = 1.0V, ƒ = 1.0MHz DS = 520V, ƒ = 1.0MHz 520V … DS Max. Units 325 mJ 5 Max. Units 2.1 65 °C/W Conditions „ = 5.2A 5. www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 5. 520V 325V 130V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms ° ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 13 50 10000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91174 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0 www.vishay.com 5 ...

Page 6

... A 400 200 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 800 780 760 740 720 + 700 0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 2.3A 3.3A BOTTOM 5. 100 125 ° J Vs. Drain Current Avalanche Current (A) av Vs. Avalanche Current www.vishay.com 150 ...

Page 7

... Voltage Inductor Curent Fig 14. For N-Channel HEXFET Document Number: 91174 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs + - V =10V www.vishay.com 7 ...

Page 8

... Pulse width ≤ 300µs; duty cycle ≤ 2%. … C eff fixed capacitance that gives the same charging time oss as C while V is rising from 0 to 80% V oss DS † t=60s, f=60Hz , Data and specifications subject to change without notice COD DSS TAC Fax: (310) 252-7903 11/03 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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