IRFP17N50L Vishay, IRFP17N50L Datasheet
IRFP17N50L
Specifications of IRFP17N50L
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IRFP17N50L Summary of contents
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... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91205 S11-0446-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP17N50L, SiHFP17N50L Power MOSFET FEATURES • SuperFast Body Diode Eliminates the Need 500 For External Diodes in ZVS Applications 0 ...
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... IRFP17N50L, SiHFP17N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... PULSE WIDTH Tj = 150°C 0.1 0 Drain-to-Source Voltage (V) Fig Typical Output Characteristics Document Number: 91205 S11-0446-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP17N50L, SiHFP17N50L 100 5.0V 0.1 10 100 3.0 2.5 2.0 5.0V 1.5 1 ...
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... IRFP17N50L, SiHFP17N50L Vishay Siliconix 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss 100 Crss 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 100 200 300 400 V DS, Drain-to-Source Voltage (V) Fig Typ. Output Capacitance Stored Energy vs. V www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91205 S11-0446-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP17N50L, SiHFP17N50L R Fig. 10a - Switching Time Test Circuit 125 150 ° ...
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... IRFP17N50L, SiHFP17N50L Vishay Siliconix 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10us 10 100us 1ms 1 10ms ° ° 150 C J Single Pulse 0.1 10 100 1000 V , Drain-to-Source Voltage (V) DS Fig Maximum Safe Operating Area D.U 0.01 Ω Fig. 14a - Unclamped Inductive Test Circuit ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91205. Document Number: 91205 S11-0446-Rev. B, 14-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP17N50L, SiHFP17N50L Peak Diode Recovery dV/dt Test Circuit + Circuit layout con ideration • Low tray inductance • ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...