IRFP23N50L Vishay, IRFP23N50L Datasheet

IRFP23N50L

Manufacturer Part Number

IRFP23N50L

Description

MOSFET N-CH 500V 23A TO-247AC

Manufacturer

Vishay

Datasheets

1.IRFP23N50L.pdf (8 pages)

2.IRFP23N50L.pdf (9 pages)

3.IRFP23N50L.pdf (9 pages)

Specifications of IRFP23N50L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

235 mOhm @ 14A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

23A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

150nC @ 10V

Input Capacitance (ciss) @ Vds

3600pF @ 25V

Power - Max

370W

Mounting Type

Through Hole

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.235 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

23 A

Power Dissipation

370 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFP23N50L

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Part Number

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Price

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Current page: 1 of 8
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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91209

S-81352-Rev. A, 16-Jun-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ 23 A, dI/dt ≤ 430 A/µs, V

(Ω)

TO-247

= 25 °C, L = 1.5 mH, R

≤ V

= 10 V

= 25 Ω, I

, T

N-Channel MOSFET

Single

≤ 150 °C.

500

150

= 23 A (see fig. 12).

Power MOSFET

0.190

= 25 °C, unless otherwise noted

6-32 or M3 screw

at 10 V

for 10 s

= 25 °C

TO-247

IRFP23N50LPbF

SiHFP23N50L-E3

IRFP23N50L

SiHFP23N50L

= 100 °C

= 25 °C

FEATURES

• Superfast Body Diode Eliminates the Need for

• Lower Gate Charge Results in Simpler Drive

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise

• Lead (Pb)-free Available

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

External Diodes in ZVS Applications

Requirements

Immunity

IRFP23N50L, SiHFP23N50L

SYMBOL

dV/dt

, T

stg

- 55 to + 150

LIMIT

300

± 30

500

410

370

2.9

1.1

Vishay Siliconix

www.vishay.com

lbf · in

UNIT

W/°C

N · m

RoHS*

COMPLIANT

V/ns

°C

Available

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