IRFP27N60KPBF Vishay, IRFP27N60KPBF Datasheet

MOSFET N-CH 600V 27A TO-247AC

IRFP27N60KPBF

Manufacturer Part Number
IRFP27N60KPBF
Description
MOSFET N-CH 600V 27A TO-247AC
Manufacturer
Vishay
Datasheets

Specifications of IRFP27N60KPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4660pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.22 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
27 A
Power Dissipation
500000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
27A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
220mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP27N60KPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP27N60KPBF
Manufacturer:
INTERSIL
Quantity:
101
Company:
Part Number:
IRFP27N60KPBF
Quantity:
5 000
Company:
Part Number:
IRFP27N60KPBF
Quantity:
70 000
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Benefits
Document Number: 91219
Applications
l
l
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l
Avalanche Characteristics
Thermal Resistance
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Symbol
E
I
E
Symbol
R
R
R
D
D
AR
DM
J
STG
D
GS
AS
AR
θJC
θCS
θJA
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@ T
@ T
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Enhanced Body Diode dv/dt Capability
Hard Switching Primary or PFC Switch
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Motor Drive
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
(1.6mm from case )
Parameter
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
600V
IRFP27N60KPbF
DSS
Typ.
Typ.
10 lbf•in (1.1N•m)
0.24
–––
–––
–––
–––
–––
-55 to + 150
HEXFET Power MOSFET
Max.
110
500
± 30
300
4.0
27
18
13
R
DS(on)
180mΩ
Max.
Max.
0.29
530
–––
27
50
40
typ.
TO-247AC
www.vishay.com
Units
W/°C
V/ns
°C
W
A
V
09/26/05
Units
Units
°C/W
27A
mJ
mJ
I
A
D
1

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IRFP27N60KPBF Summary of contents

Page 1

... Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Document Number: 91219 SMPS MOSFET IRFP27N60KPbF HEXFET Power MOSFET V DSS 600V Max. @ 10V GS @ 10V GS 110 500 ± 150 300 10 lbf•in (1.1N•m) Typ. ...

Page 2

... 10V,See Fig. 10 „ 25V DS pF ƒ = 1.0MHz, See Fig 0V 1.0V, ƒ = 1.0MHz 0V 480V, ƒ = 1.0MHz 480V … 0V Conditions MOSFET symbol showing the integral reverse G p-n junction diode „ 25° 27A 25° 27A J F di/dt = 100A/µs „ µ DSS. www.vishay.com ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 28A V = 10V GS - 100 120 140 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 160 3 ...

Page 4

... 25° 150°C Single Pulse 0.1 1.1 1.4 10 Fig 8. Maximum Safe Operating Area = 28A V = 480V 300V 120V 120 Q , Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED (on) 100µsec 1msec 10msec 100 1000 Drain-toSource Voltage (V) www.vishay.com 150 10000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91219 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Fig 13a. Gate Charge Test Circuit Document Number: 91219 I D TOP 13A 18A BOTTOM 28A R G 20V Fig 12c. Unclamped Inductive Test Circuit 125 150 ° Fig 12d. Unclamped Inductive Waveforms Fig 13b. Basic Gate Charge Waveform 15V DRIVER D.U 0.01 Ω (BR)DSS Charge www.vishay.com A 6 ...

Page 7

... Voltage Inductor Curent Fig 14. For N-Channel HEXFET Document Number: 91219 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs + - V =10V www.vishay.com 7 ...

Page 8

... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Q6SUÃIVH7 S 5)3( "$C 96U Ã8P9 $% $& ` 6SÃÃ2Ã! X FÃ"$ GDI ÃC TAC Fax: (310) 252-7903 09/05 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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