MOSFET N-CH 500V 31A TO-247AC

IRFP31N50LPBF

Manufacturer Part NumberIRFP31N50LPBF
DescriptionMOSFET N-CH 500V 31A TO-247AC
ManufacturerVishay
IRFP31N50LPBF datasheets
 


Specifications of IRFP31N50LPBF

Transistor PolarityN-ChannelFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs180 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)500VCurrent - Continuous Drain (id) @ 25° C31A
Vgs(th) (max) @ Id5V @ 250µAGate Charge (qg) @ Vgs210nC @ 10V
Input Capacitance (ciss) @ Vds5000pF @ 25VPower - Max460W
Mounting TypeThrough HolePackage / CaseTO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)0.18 Ohm @ 10 VDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current31 A
Power Dissipation460000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleContinuous Drain Current Id31A
Drain Source Voltage Vds500VOn Resistance Rds(on)180mohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ5V
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFP31N50LPBF
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Applications
Features and Benefits
.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C Continuous Drain Current, V
D
C
I
@ T
= 100°C Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
Symbol
Parameter
I
Continuous Source Current
S
(Body Diode)
I
Pulsed Source Current
SM
Ã
(Body Diode)
V
Diode Forward Voltage
SD
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
I
Reverse Recovery Current
RRM
t
Forward Turn-On Time
on
Document Number: 91220
SMPS MOSFET
IRFP31N50LPbF
HEXFET Power MOSFET
V
R
DSS
500V
Max.
@ 10V
31
GS
@ 10V
20
GS
124
460
3.7
±30
d
19
-55 to + 150
300 (1.6mm from case )
x
10lb
in (1.1N
Min. Typ. Max. Units
–––
–––
31
MOSFET symbol
A
showing the
–––
–––
124
integral reverse
p-n junction diode.
T
–––
–––
1.5
V
––– 170
250
ns
T
T
–––
220
330
nC T
–––
570
860
µC T
–––
1.2
1.8
T
–––
7.9
12
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
PD - 95051
Trr
I
typ.
typ.
DS(on)
D
0.15Ω
170ns
31A
TO-247AC
Units
A
W
W/°C
V
V/ns
°C
x
m)
Conditions
f
= 25°C, I
= 31A, V
= 0V
J
S
GS
= 25°C, I
= 31A
J
F
f
= 125°C, di/dt = 100A/µs
J
f
= 25°C, I
= 31A, V
= 0V
J
S
GS
f
= 125°C, di/dt = 100A/µs
J
= 25°C
J
2/26/04
www.vishay.com
1

IRFP31N50LPBF Summary of contents

  • Page 1

    ... Diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM t Forward Turn-On Time on Document Number: 91220 SMPS MOSFET IRFP31N50LPbF HEXFET Power MOSFET V R DSS 500V Max. @ 10V 10V 20 GS 124 460 3.7 ±30 d ...

  • Page 2

    ... IRFP31N50LPbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFP31N50LPbF VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 5.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS 31A V = 10V ...

  • Page 4

    ... IRFP31N50LPbF 1000000 0V MHZ C iss = SHORTED C rss = C gd 100000 C oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 31A Total Gate Charge (nC) G Fig 7. Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91220 100 1000 0 1000 = 400V DS = 250V ...

  • Page 5

    ... SINGLE PULSE 0.01 0.01 (THERMAL RESPONSE) 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91220 IRFP31N50LPbF Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1 ...

  • Page 6

    ... IRFP31N50LPbF 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ° ° 150 C J Single Pulse 1 10 100 V , Drain-to-Source Voltage (V) DS Fig 12. Maximum Safe Operating Area D.U 20V 0.01 Ω Fig 14a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ ...

  • Page 7

    ... Inductor Curent * Fig 16. For N-Channel HEXFET Document Number: 91220 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRFP31N50LPbF + - * V =10V www.vishay.com 7 ...

  • Page 8

    ... IRFP31N50LPbF 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates " ...

  • Page 9

    ... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...