IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet
IRFP31N50LPBF
Specifications of IRFP31N50LPBF
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IRFP31N50LPBF Summary of contents
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... Diode) V Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Reverse Recovery Current RRM t Forward Turn-On Time on Document Number: 91220 SMPS MOSFET IRFP31N50LPbF HEXFET Power MOSFET V R DSS 500V Max. @ 10V 10V 20 GS 124 460 3.7 ±30 d ...
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... IRFP31N50LPbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...
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... Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRFP31N50LPbF VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 5.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS 31A V = 10V ...
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... IRFP31N50LPbF 1000000 0V MHZ C iss = SHORTED C rss = C gd 100000 C oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 31A Total Gate Charge (nC) G Fig 7. Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91220 100 1000 0 1000 = 400V DS = 250V ...
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... SINGLE PULSE 0.01 0.01 (THERMAL RESPONSE) 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91220 IRFP31N50LPbF Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1 ...
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... IRFP31N50LPbF 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ° ° 150 C J Single Pulse 1 10 100 V , Drain-to-Source Voltage (V) DS Fig 12. Maximum Safe Operating Area D.U 20V 0.01 Ω Fig 14a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ ...
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... Inductor Curent * Fig 16. For N-Channel HEXFET Document Number: 91220 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRFP31N50LPbF + - * V =10V www.vishay.com 7 ...
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... IRFP31N50LPbF 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates " ...
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