IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet
IRFP31N50LPBF
Specifications of IRFP31N50LPBF
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IRFP31N50LPBF Summary of contents
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... Higher Gate Voltage Threshold Offers Improved Noise Immunity D • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies S • Motor Control Applications N-Channel MOSFET TO-247AC IRFP31N50LPbF SiHFP31N50L-E3 IRFP31N50L SiHFP31N50L = 25 °C, unless otherwise noted) C SYMBOL ° ...
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... IRFP31N50L, SiHFP31N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... V 1 0.1 100 4 3.0 2.5 2.0 5.0 V 1.5 1.0 0.5 0 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix 150 ° ° μs PULSE WIDTH Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics 100 120 140 160 - Junction Temperature www ...
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... IRFP31N50L, SiHFP31N50L Vishay Siliconix 1 000 000 iss = rss = C gd 100 000 C oss = 000 C iss 1000 C oss 100 C rss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 100 400 200 300 Drain-to-Source Voltage (V) Fig Output Capacitance Stored Energy vs. V www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... Fig. 10a - Switching Time Test Circuit 125 150 V GS Fig. 10b - Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) Driver + - Fig. 12b - Unclamped Inductive Waveforms This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r ...
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... IRFP31N50L, SiHFP31N50L Vishay Siliconix 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ° 150 °C J Single Pulse 1 10 100 V , Drain-to-Source Voltage (V) DS Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Safe Operating Area www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91220. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...