IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP31N50LPBF
• Description: MOSFET N-CH 500V 31A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP31N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP31N50LPBF

IRFP31N50LPbF
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‚
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Document Number: 91220
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
C
E
I
E
R
R
R
Notes:
Static @ T
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
AR
(BR)DSS
GS(th)
AS
AR
DS(on)
G
iss
oss
rss
oss
oss
oss
oss
θJC
θCS
θJA
g
gs
gd
Repetitive rating; pulse width limited by
I
(BR)DSS
max. junction temperature. (See Fig. 11)
T
Starting T
SD
Symbol
Symbol
Symbol
Symbol
I
AS
J
eff.
eff. (ER)
≤ 150°C.
= 31A, di/dt ≤ 422A/µs, V
= 31A (See Figure 12).
/∆T
J
J
= 25°C, L = 1mH, R
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
DD
≤ V
G
Ù
= 25Ω,
(BR)DSS
,
™
„
…
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
C
as C
as C
oss
oss
Min. Typ. Max. Units
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
15
eff. is a fixed capacitance that gives the same charging time
oss
oss
eff.(ER) is a fixed capacitance that stores the same energy
while V
while V
5000
6630
0.28
0.15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
115
553
155
276
200
1.1
28
54
53
59
DS
DS
Typ.
-100
Typ.
0.18
0.24
is rising from 0 to 80% V
–––
–––
100
–––
–––
210
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
2.0
is rising from 0 to 80% V
50
58
V/°C
mA
nC
µA
nA
pF
ns
Ω
Ω
V
V
S
V
V
V
V
f = 1MHz, open drain
I
V
R
V
V
V
Reference to 25°C, I
V
V
V
V
V
I
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 31A
= 31A
= 4.3Ω
= 0V, I
= 10V, I
= V
= 500V, V
= 400V, V
= 30V
= -30V
= 50V, I
= 400V
= 10V, See Fig. 7 & 15
= 250V
= 10V, See Fig. 14a & 14b
= 0V
= 25V
= 0V, V
= 0V, V
= 0V,V
GS
Max.
Max.
0.26
460
–––
, I
31
46
40
DSS
Conditions
Conditions
D
DS
D
DS
DS
DSS
D
D
= 250µA
= 250µA
= 19A
= 19A
= 0V to 400V
GS
GS
.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
.
= 0V
= 0V, T
www.vishay.com
D
f
= 1mA
J
= 125°C
Units
Units
°C/W
f
g
mJ
mJ
A
f
2