IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP31N50LPBF
• Description: MOSFET N-CH 500V 31A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP31N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP31N50LPBF

IRFP31N50LPbF
Document Number: 91220
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Fig 5. Typical Capacitance vs.
I =
Fig 7. Typical Gate Charge vs.
D
1
Drain-to-Source Voltage
31A
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
G
40
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
10
= C gd
80
Coss
V
V
V
f = 1 MHZ
Ciss
Crss
DS
DS
DS
100
= 400V
= 250V
= 100V
120
160
1000
1000
30
25
20
15
10
100
0.1
5
0
10
1
0.2
Fig 8. Typical Source-Drain Diode
0
Fig 6. Typ. Output Capacitance
T = 150 C
J
100
V DS, Drain-to-Source Voltage (V)
V
SD
Stored Energy vs. V
0.6
Forward Voltage
,Source-to-Drain Voltage (V)
°
200
T = 25 C
300
J
1.0
°
400
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1.4
DS
V
GS
500
= 0 V
600
1.8
4