IRFP31N50LPBF Vishay, IRFP31N50LPBF Datasheet - Page 5

• Manufacturer Part Number: IRFP31N50LPBF
• Description: MOSFET N-CH 500V 31A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP31N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 460000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 31A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP31N50LPBF

Document Number: 91220
0.001
0.01
0.1
35
30
25
20
15
10
0.00001
5
0
1
Fig 9. Maximum Drain Current vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
0.001
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
t
IRFP31N50LPbF
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
J
≤ 1
DM
x Z
1
0.1
thJC
P
2
t
DM
d(off)
+ T
www.vishay.com
C
t
1
t
f
t
2
+
-
5
1