IRFP26N60LPBF Vishay, IRFP26N60LPBF Datasheet

MOSFET N-CH 600V 26A TO-247AC

IRFP26N60LPBF

Manufacturer Part Number
IRFP26N60LPBF
Description
MOSFET N-CH 600V 26A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP26N60LPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
5020pF @ 25V
Power - Max
470W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
470000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
26A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP26N60LPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP26N60LPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91218
S11-0487-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
TO-247AC
 26 A, dI/dt  480 A/μs, V
()
J
= 25 °C, L = 1.7 mH, R
G
D
a
S
c
a
a
b
DD
V
GS
 V
g
= 10 V
= 25 , I
DS
G
, T
N-Channel MOSFET
J
Single
 150 °C.
600
180
61
85
AS
This datasheet is subject to change without notice.
= 26 A, dV/dt = 21 V/ns (see fig. 12).
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.21
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247AC
IRFP26N60LPbF
SiHFP26N60L-E3
IRFP26N60L
SiHFP26N60L
= 100 °C
= 25 °C
FEATURES
• Superfast Body Diode Eliminates the Need for
• Lower Gate Charge Results in Simpler Drive
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching (SMPS)
• Telecom and Server Power Supplies
• Uninterruptible Power Suplies
• Motor Control Applications
External Diodes in ZVS Applications
Requirements
Immunity
IRFP26N60L, SiHFP26N60L
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
stg
- 55 to + 150
LIMIT
300
± 30
600
100
570
470
3.8
1.1
26
17
26
47
21
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

Related parts for IRFP26N60LPBF

IRFP26N60LPBF Summary of contents

Page 1

... Higher Gate Voltage Threshold Offers Improved Noise Immunity D • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching (SMPS) • Telecom and Server Power Supplies • Uninterruptible Power Suplies S • Motor Control Applications TO-247AC IRFP26N60LPbF SiHFP26N60L-E3 IRFP26N60L SiHFP26N60L = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRFP26N60L, SiHFP26N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... V 1.5 1.0 0 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix 150 ° ° μs PULSE WIDTH 12.0 14.0 16.0 4.0 6.0 8.0 10 Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics ...

Page 4

... IRFP26N60L, SiHFP26N60L Vishay Siliconix 1000000 iss = rss = oss = 10000 C iss 1000 C oss 100 C rss 10 1 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 100 200 300 400 Drain-to-Source Voltage (V) Fig Typical Output Capacitance Stored Energy vs.V www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 12 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig. 11b - Switching Time Waveforms 0.0001 0.001 t , Rectangular Pulse Duration (s) This datasheet is subject to change without notice. Vishay Siliconix 50 75 100 125 150 Case Temperature (° d(on) r d(off Notes: 1. Duty factor Peak thJC + ...

Page 6

... IRFP26N60L, SiHFP26N60L Vishay Siliconix 6.0 5.0 4 250 μA 3.0 2.0 - Temperature (°C) Fig Threshold Voltage vs. Temperature D.U 0.01 Ω Fig. 14a - Unclamped Inductive Test Circuit Fig. 14b - Unclamped Inductive Waveforms www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91218. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords