IRFPC60 Vishay, IRFPC60 Datasheet

MOSFET N-CH 600V 16A TO-247AC

IRFPC60

Manufacturer Part Number
IRFPC60
Description
MOSFET N-CH 600V 16A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFPC60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 9.6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
56 ns
Minimum Operating Temperature
- 55 C
Rise Time
54 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPC60

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPC60
Manufacturer:
IR
Quantity:
890
Part Number:
IRFPC60
Manufacturer:
IR
Quantity:
5 510
Part Number:
IRFPC60
Manufacturer:
COPAL
Quantity:
5 510
Part Number:
IRFPC60
Manufacturer:
ST
0
Part Number:
IRFPC60
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFPC60LC
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFPC60LCPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFPC60LCPBF
Quantity:
5 000
Company:
Part Number:
IRFPC60LCPBF
Quantity:
5 000
Company:
Part Number:
IRFPC60LCPBF
Quantity:
70 000
Part Number:
IRFPC60PBF
Manufacturer:
NXP
Quantity:
40 000
Part Number:
IRFPC60PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFPC60PBF
Quantity:
175
Company:
Part Number:
IRFPC60PBF
Quantity:
70 000
* Pb containing terminations are not RoHS compliant, exemptions may apply
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
Document Number: 91245
S-81264-Rev. A, 21-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 16 A, dI/dt ≤ 140 A/µs, V
= 50 V, starting T
(Ω)
TO-247
a
G
J
D
= 25 °C, L = 7.2 mH, R
S
c
a
a
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
600
210
110
26
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.40
GS
AS
6-32 or M3 screw
at 10 V
= 16 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFPC60PbF
SiHFPC60-E3
IRFPC60
SiHFPC60
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFPC60, SiHFPC60
design,
- 55 to + 150
LIMIT
1000
300
± 20
600
280
2.2
3.0
1.1
16
10
64
16
28
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRFPC60

IRFPC60 Summary of contents

Page 1

... TO-247 IRFPC60PbF SiHFPC60-E3 IRFPC60 SiHFPC60 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 150 ° IRFPC60, SiHFPC60 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 600 DS V ± 2.2 E 1000 ...

Page 2

... IRFPC60, SiHFPC60 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91245 S-81264-Rev. A, 21-Jul- °C C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFPC60, SiHFPC60 Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

Page 4

... IRFPC60, SiHFPC60 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91245 S-81264-Rev. A, 21-Jul-08 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91245 S-81264-Rev. A, 21-Jul-08 IRFPC60, SiHFPC60 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRFPC60, SiHFPC60 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRFPC60, SiHFPC60 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords