IRFPC60LC Vishay, IRFPC60LC Datasheet

MOSFET N-CH 600V 16A TO-247AC

IRFPC60LC

Manufacturer Part Number
IRFPC60LC
Description
MOSFET N-CH 600V 16A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFPC60LC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 9.6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3500pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPC60LC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFPC60LC
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFPC60LCPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFPC60LCPBF
Quantity:
5 000
Company:
Part Number:
IRFPC60LCPBF
Quantity:
5 000
Company:
Part Number:
IRFPC60LCPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91244
S09-0064-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 16 A, dI/dt ≤ 140 A/µs, V
= 25 V, starting T
(Ω)
TO-247
a
G
J
D
= 25 °C, L = 7.2 mH, R
S
c
a
a
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
600
120
29
48
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.40
GS
AS
6-32 or M3 screw
at 10 V
= 16 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFPC60LCPbF
SiHFPC60LC-E3
IRFPC60LC
SiHFPC60LC
= 100 °C
= 25 °C
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFETs technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of Power MOSFETs offer the
designer a new standart in power transistors for switching
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
SYMBOL
IRFPC60LC, SiHFPC60LC
T
dV/dt
J
iss
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
, C
stg
oss
GS
, C
Rating
rss
- 55 to + 150
LIMIT
1000
300
± 30
600
280
2.2
3.0
1.1
16
10
64
16
28
10
Vishay Siliconix
d
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFPC60LC Summary of contents

Page 1

... TO-218 package because of its isolated mounting hole. TO-247 IRFPC60LCPbF SiHFPC60LC-E3 IRFPC60LC SiHFPC60LC = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 150 ° IRFPC60LC, SiHFPC60LC Vishay Siliconix Rating iss oss rss SYMBOL LIMIT V 600 DS V ± 2.2 E 1000 ...

Page 2

... IRFPC60LC, SiHFPC60LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91244 S09-0064-Rev. A, 02-Feb-09 IRFPC60LC, SiHFPC60LC = 25 °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFPC60LC, SiHFPC60LC Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91244 S09-0064-Rev. A, 02-Feb-09 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case V DS Vary t to obtain p required I AS D.U Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91244 S09-0064-Rev. A, 02-Feb- 0.01 Ω IRFPC60LC, SiHFPC60LC Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFPC60LC, SiHFPC60LC Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Document Number: 91244 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFPC60LC, SiHFPC60LC Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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