IRFP360LC Vishay, IRFP360LC Datasheet

MOSFET N-CH 400V 23A TO-247AC

IRFP360LC

Manufacturer Part Number
IRFP360LC
Description
MOSFET N-CH 400V 23A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP360LC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
23 A
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP360LC

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Manufacturer
Quantity
Price
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12 500
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91227
S09-0006-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 23 A, dI/dt ≤ 170 A/µs, V
= 25 V, starting T
(Ω)
TO-247
G
a
J
D
= 25 °C, L = 4.0 mH, R
S
c
a
a
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
110
28
45
G
= 25 Ω, I
D
S
C
Power MOSFET
0.20
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 23 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP360LCPbF
SiHFP360LC-E3
IRFP360LC
SiHFP360LC
= 100 °C
= 25 °C
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over convertional MOSFETs.
Utilizing advanced MOSFETs technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of MOSFETs offer the designer a
new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
SYMBOL
T
IRFP360LC, SiHFP360LC
dV/dt
J
iss
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
, C
stg
oss
GS
, C
Rating
rss
- 55 to + 150
LIMIT
1200
300
± 30
400
280
2.2
4.0
1.1
23
14
91
23
28
10
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
RoHS*
COMPLIANT
W
V
A
A
Available
1

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IRFP360LC Summary of contents

Page 1

... TO-218 package because of its isolated mounting hole. TO-247 IRFP360LCPbF SiHFP360LC-E3 IRFP360LC SiHFP360LC = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 150 ° IRFP360LC, SiHFP360LC Vishay Siliconix Rating iss oss rss SYMBOL LIMIT V 400 DS V ± 2.2 E 1200 ...

Page 2

... IRFP360LC, SiHFP360LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91227 S09-0006-Rev. A, 19-Jan-09 IRFP360LC, SiHFP360LC = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFP360LC, SiHFP360LC Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91227 S09-0006-Rev. A, 19-Jan-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91227 S09-0006-Rev. A, 19-Jan-09 IRFP360LC, SiHFP360LC Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRFP360LC, SiHFP360LC Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFP360LC, SiHFP360LC Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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