PMV213SN,215 NXP Semiconductors, PMV213SN,215 Datasheet

MOSFET N-CH 100V 1.9A SOT23

PMV213SN,215

Manufacturer Part Number
PMV213SN,215
Description
MOSFET N-CH 100V 1.9A SOT23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMV213SN215.pdf (12 pages)

Specifications of PMV213SN,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.9 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057521215
PMV213SN T/R
PMV213SN T/R

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
PMV213SN,215
Manufacturer:
HEXAWAVE
Quantity:
3 680
Company:
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Part Number:
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Manufacturer:
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Quantity:
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Company:
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Part Number:
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1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Description
gate (g)
source (s)
drain (d)
Pinning - SOT23 simplified outline and symbol
M3D088
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMV213SN in SOT23.
PMV213SN
Rev. 02 — 19 February 2003
Low on-state resistance in a small surface mount package.
DC-to-DC primary side switching.
V
P
TrenchMOS™ standard level FET
Simplified outline
DS
tot
2 W
100 V
Top view
1
SOT23
3
MSB003
2
I
R
D
DSon
1.9 A
250 m
Symbol
MBB076
Product data
g
d
s

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PMV213SN,215 Summary of contents

Page 1

PMV213SN TrenchMOS™ standard level FET Rev. 02 — 19 February 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23. 1.2 Features Low on-state resistance in ...

Page 2

Philips Semiconductors 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGR V gate-source voltage (DC drain current (DC) ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 4.1 Transient thermal impedance th(j-sp) (K/W) = 0.5 0.2 10 0.1 0.05 0.02 single pulse 1 10 ...

Page 5

Philips Semiconductors 5. Characteristics Table 4: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors ( 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 400 5 ...

Page 7

Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors ( 150 0.3 0 and 150 Fig 12. Source (diode forward) current as a ...

Page 9

Philips Semiconductors 6. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 7. Revision history Table 5: Revision history Rev Date CPCN Description 02 20030219 - Product data (9397 750 11128) Modifications: • Section 1.4 “Quick reference data” • Section 1.4 “Quick reference data” • Section 3 “Limiting values” • ...

Page 11

Philips Semiconductors Philips Semiconductors 8. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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