PHP18NQ10T,127 NXP Semiconductors, PHP18NQ10T,127 Datasheet

MOSFET N-CH 100V 18A SOT78

PHP18NQ10T,127

Manufacturer Part Number
PHP18NQ10T,127
Description
MOSFET N-CH 100V 18A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PHP18NQ10T127.pdf (12 pages)

Specifications of PHP18NQ10T,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
79W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
21nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
18A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 9A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
79000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055698127::PHP18NQ10T::PHP18NQ10T
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB18NQ10T is supplied in the SOT404 (D
The PHD18NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
D
PIN
, T
tab
1
2
3
stg
gate
drain
source
drain
DESCRIPTION
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
1
SOT78 (TO220AB)
transistor
SYMBOL
tab
CONDITIONS
T
T
T
T
T
T
j
j
mb
mb
mb
mb
1 2 3
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
2
PAK) surface mounting package.
g
1
GS
GS
d
s
= 10 V
SOT404 (D
= 10 V
GS
= 20 k
1
tab
PHP18NQ10T, PHB18NQ10T
2
2
PAK)
3
QUICK REFERENCE DATA
R
MIN.
- 55
V
DS(ON)
SOT428 (DPAK)
-
-
-
-
-
-
-
DSS
I
D
Product specification
= 18 A
PHD18NQ10T
= 100 V
MAX.
90 m
100
100
175
18
13
72
79
1
20
tab
2
3
Rev 1.000
UNIT
W
˚C
V
V
V
A
A
A

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PHP18NQ10T,127 Summary of contents

Page 1

Philips Semiconductors N-channel TrenchMOS FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters ...

Page 2

Philips Semiconductors N-channel TrenchMOS AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER E Non-repetitive avalanche AS energy I Peak non-repetitive AS avalanche current THERMAL RESISTANCES SYMBOL PARAMETER R Thermal resistance junction ...

Page 3

Philips Semiconductors N-channel TrenchMOS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER I Continuous source current S (body diode) I Pulsed source current (body SM diode) V Diode forward voltage SD t Reverse ...

Page 4

Philips Semiconductors N-channel TrenchMOS Normalised Power Derating, PD (%) 100 100 Mounting Base temperature, Tmb (C) Fig.1. Normalised power dissipation. PD% = 100 ...

Page 5

Philips Semiconductors N-channel TrenchMOS Drain current, ID (A) 20 VDS > RDS(ON 175 Gate-source voltage, VGS ...

Page 6

Philips Semiconductors N-channel TrenchMOS Gate-source voltage, VGS ( 18A VDD = VDD = ...

Page 7

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 mm 4.1 1.27 0.7 Note 1. Terminals in this zone ...

Page 8

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 mm 4.10 1.27 OUTLINE VERSION ...

Page 9

Philips Semiconductors N-channel TrenchMOS MOUNTING INSTRUCTIONS Dimensions in mm August 1999 transistor 11.5 9.0 2.0 3.8 5.08 Fig.18. SOT404 : soldering pattern for surface mounting . 9 Product specification PHP18NQ10T, PHB18NQ10T PHD18NQ10T 17.5 Rev 1.000 ...

Page 10

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions UNIT max. ...

Page 11

Philips Semiconductors N-channel TrenchMOS MOUNTING INSTRUCTIONS Dimensions in mm August 1999 transistor 7.0 2.15 2.5 4.57 Fig.20. SOT428 : soldering pattern for surface mounting . 11 Product specification PHP18NQ10T, PHB18NQ10T PHD18NQ10T 7.0 1.5 Rev 1.000 ...

Page 12

Philips Semiconductors N-channel TrenchMOS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...

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