PHB66NQ03LT,118 NXP Semiconductors, PHB66NQ03LT,118 Datasheet
PHB66NQ03LT,118
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PHB66NQ03LT,118 Summary of contents
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PHB66NQ03LT N-channel TrenchMOS logic level FET Rev. 07 — 30 January 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain [ not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description PHB66NQ03LT D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of mounting base temperature (A) Limit DSon Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHB66NQ03LT_7 Product data sheet 03aa24 120 P der (%) 150 200 0 T (°C) mb Fig 2 ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-a) junction to ambient R thermal resistance from th(j-mb) junction to mounting base 10 Z th(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 -1 0.05 10 0.02 single pulse - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...
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... NXP Semiconductors ° ( 0.5 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 2.5 V GS(th) (V) 2 max 1.5 typ 1 min 0 Fig 7. Gate-source threshold voltage as a function of junction temperature PHB66NQ03LT_7 Product data sheet 03ag20 4 (V) DS Fig 6. Transfer characteristics: drain current as a function of gate-source voltage ...
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... NXP Semiconductors ° DSon (m Ω Fig 9. Drain-source on-state resistance as a function of drain current; typical values ° ( Fig 11. Gate-source voltage as a function of gate charge; typical values PHB66NQ03LT_7 Product data sheet 03ag21 4 1 0 (A) D Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHB66NQ03LT_7 Product data sheet ( 175 ° 0.3 0.6 0.9 Rev. 07 — 30 January 2009 PHB66NQ03LT N-channel TrenchMOS logic level FET 03ag23 = 25 ° C 1.2 V (V) SD © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 14. Package outline SOT404 (D2PAK) PHB66NQ03LT_7 Product data sheet 2.5 ...
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... Product data sheet Data sheet status Product data sheet The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet Product data sheet ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Legal information .12 9.1 Data sheet status ...