PSMN085-150K,518 NXP Semiconductors, PSMN085-150K,518 Datasheet

MOSFET N-CH 150V 4.1A SOT96-1

PSMN085-150K,518

Manufacturer Part Number
PSMN085-150K,518
Description
MOSFET N-CH 150V 4.1A SOT96-1
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN085-150K,518

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1310pF @ 25V
Power - Max
3.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056596518
PSMN085-150K /T3
PSMN085-150K /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DSon
GD
Low conduction losses due to low
on-state resistance
Computer motherboards
DC-to-DC convertors
PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 1 March 2010
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
T
Conditions
see
T
V
V
see
V
T
see
j
sp
sp
j
GS
DS
GS
≥ 25 °C; T
= 25 °C;
= 80 °C;
= 80 °C; see
Figure 1
Figure 11
Figure 9
= 75 V; T
= 10 V; I
= 10 V; I
j
D
D
and
and
≤ 150 °C
j
= 25 °C;
= 4.1 A;
= 3.5 A;
Figure 2
3
10
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
12
67
Max
150
3.5
3.5
17
85
Unit
V
A
W
nC
mΩ

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PSMN085-150K,518 Summary of contents

Page 1

... PSMN085-150K N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 1 March 2010 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... PSMN085-150K SO8 PSMN085-150K_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Simplified outline Description plastic small outline package; 8 leads; body width 3.9 mm All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K Graphic symbol SOT96-1 (SO8 mbb076 ...

Page 3

... ° 03aa25 120 P der (%) 80 40 150 200 T (°C) sp Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K Min - -20 - Figure -55 - 100 150 Normalized total power dissipation as a function of solder point temperature © NXP B.V. 2010. All rights reserved. ...

Page 4

... N-channel TrenchMOS SiliconMAX standard level FET = D.C. δ Conditions mounted on a metal clad substrate; see Figure 4 −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K 03ae15 µs p 100 µ 100 (V) DS Min Typ - - 03ae14 t p δ ...

Page 5

... MHz °C; see Figure Ω Ω ° G(ext 4 ° see Figure 2 ° see Figure 4 /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K Min Typ 150 180 - - 161 - 1310 - 170 - 0 100 - 0.36 © ...

Page 6

... N-channel TrenchMOS SiliconMAX standard level FET 03ae16 (V) DS Fig 6. 03aa35 V typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K 30 V > DSon 150 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 5 GS(th) ...

Page 7

... N-channel TrenchMOS SiliconMAX standard level FET 03ae17 = 25 ° (A) D Fig 10. Normalized drain-source on-state resistance 03ae22 120 (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K - factor as a function of junction temperature iss C , oss C rss (pF − ...

Page 8

... PSMN085-150K_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 03ae19 = 25 °C j 150 ° (A) D Fig 14. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K (A) 20 150 ° 0.4 0.8 voltage; typical values 03ae20 = 25 ° ...

Page 9

... REFERENCES JEDEC JEITA MS-012 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K θ detail 6.2 1 ...

Page 10

... Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product specification - All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K Supersedes PSMN085_150K-01 - © NXP B.V. 2010. All rights reserved ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN085-150K Trademarks © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 March 2010 Document identifier: PSMN085-150K_2 ...

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