RSS100N03FU6TB Rohm Semiconductor, RSS100N03FU6TB Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single RSS100N03FU6TB
Manufacturer Part Number
RSS100N03FU6TB
Description
MOSFET N-CH 30V 10A 8SOIC
Manufacturer
Rohm Semiconductor
Specifications of RSS100N03FU6TB
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1070pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
9.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Transistor Case Style
SOP
No. Of
RoHS Compliant
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
RSS100N03FU6TB
Transistor
Switching (30V, ±10A)
RSS100N03
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Power switching, DC/DC converter.
•Silicon N-channel MOS FET
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipatino
Channel temperature
Strage temperature
1 Pw 10 s, Duty cycle 1%
2 Mounted on a ceramic board.
Applications
Features
Structure
Absolute maximum ratings (Ta=25°C)
Parameter
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
55 to 150
Limits
150
1.6
6.4
30
20
10
40
2
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
External dimensions (Unit : mm)
Equivalent circuit
1 ESD PROTECTION DIODE
2 BODY DIODE
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
SOP8
(8)
(1)
Unit
W
V
V
A
A
A
A
C
C
2
(7)
(2)
1
1
2
(6)
(3)
1
1.27
5.0 0.2
(5)
(4)
0.1
0.4 0.1
Each lead has same dimensions
(1) (2) (3) (4)
(8) (7) (6) (5)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
RSS100N03
0.2 0.1
1/3
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RSS100N03FU6TB Summary of contents
Transistor Switching (30V, ±10A) RSS100N03 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Applications Power switching, DC/DC converter. Structure •Silicon N-channel MOS FET Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage ...
Transistor Thermal resistance (Ta=25°C) Parameter Channel to ambient Rth (ch-a) Mounted on a ceramic board. Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage ...
Transistor 100 V 10V DS Pulsed 10 Ta 125 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 GATE-SOURCE VOLTAGE : V (V) GS Fig.4 Typical Transfer Characteristics ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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