PSMN005-30K,518 NXP Semiconductors, PSMN005-30K,518 Datasheet

MOSFET N-CH 30V 20A SOT96-1

PSMN005-30K,518

Manufacturer Part Number
PSMN005-30K,518
Description
MOSFET N-CH 30V 20A SOT96-1
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN005-30K,518

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 4.5V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
3.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
3.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056843518
PSMN005-30K /T3
PSMN005-30K /T3
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN005-30K in SOT96-1 (SO8).
PSMN005-30K
TrenchMOS™ logic level FET
Rev. 01 — 6 March 2002
Very low on-state resistance
Fast switching
TrenchMOS™ technology.
DC to DC convertors
Computer motherboards
Switch mode power supplies.
Simplified outline
SOT96-1 (SO8)
1
8
Top view
MBK187
5
4
Symbol
MBB076
g
d
s
Product data

Related parts for PSMN005-30K,518

PSMN005-30K,518 Summary of contents

Page 1

... Rev. 01 — 6 March 2002 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN005-30K in SOT96-1 (SO8). 2. Features Very low on-state resistance Fast switching TrenchMOS™ technology. 3. Applications ...

Page 2

... S I peak source (diode forward) current T SM 9397 750 09334 Product data Conditions 150 Conditions 150 10V pulsed pulsed Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET Typ Max Unit - 3 150 C 4.4 5.5 m Min Max Unit - 3 +150 C 55 +150 ...

Page 3

... Product data 03aa17 120 I der (%) 150 200 T sp (º der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03aa25 0 50 100 150 200 ------------------- 100 03ah05 µs 100 µs ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09334 Product data Conditions Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET Min Typ Max Unit Figure K/W 03ah04 ...

Page 5

... SD t reverse recovery time rr Q recovery charge r 9397 750 09334 Product data Conditions I = 250 mA 150 150 4 4 MHz /dt = 100 Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET Min Typ Max Unit 100 nA - 4 3100 - pF - 605 - pF - 405 - 0.81 1 © ...

Page 6

... V 1.2 0 ---------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03ah08 V DS > DSon 150 ºC 25 º (V) > DSon 03af18 0 60 120 180 T j (ºC) DSon © ...

Page 7

... Product data 03af65 120 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF) C iss oss C rss (V) Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03af66 min typ max 03ah10 10 2 © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 8

... Product data 03ah09 ( º Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET 03ah11 º (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 9

... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.0100 0.20 0.16 0.244 0.050 0.041 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012 Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET detail 1.0 0.7 1.05 0.25 0.25 ...

Page 10

... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020306 - Product Data; initial version 9397 750 09334 Product data Rev. 01 — 6 March 2002 PSMN005-30K TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 11

... SiliconMAX — trademark of Koninklijke Philips Electronics N.V. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 6 March 2002 Rev. 01 — 6 March 2002 PSMN005-30K PSMN005-30K TrenchMOS™ logic level FET TrenchMOS™ logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 12

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 March 2002 Document order number: 9397 750 09334 PSMN005-30K TrenchMOS™ logic level FET ...

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