PH1730AL,115

Manufacturer Part NumberPH1730AL,115
DescriptionMOSFET N-CH TRENCH 30V LFPAK
ManufacturerNXP Semiconductors
SeriesTrenchMOS™
PH1730AL,115 datasheet
 

Specifications of PH1730AL,115

Package / CaseLFPak-4Fet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs1.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)30VCurrent - Continuous Drain (id) @ 25° C100A
Vgs(th) (max) @ Id2.15V @ 1mAGate Charge (qg) @ Vgs77.9nC @ 10V
Input Capacitance (ciss) @ Vds5057pF @ 12VPower - Max109W
Mounting TypeSurface MountGate Charge Qg36.2 nC
Minimum Operating Temperature- 55 CConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)1.7 mOhms
Drain-source Breakdown Voltage30 VContinuous Drain Current100 A
Power Dissipation109 WMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names934063082115  
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PH1730AL
N-channel TrenchMOS logic level FET
Rev. 03 — 12 January 2010
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing and consumer applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
1.3 Applications
Consumer applications
Desktop Voltage Regulator Module
(VRM)
1.4 Quick reference data
Table 1.
Symbol Parameter
V
drain-source voltage T
DS
I
drain current
D
P
total power
tot
dissipation
Dynamic characteristics
Q
gate-drain charge
GD
Q
total gate charge
G(tot)
Static characteristics
R
drain-source
DSon
on-state resistance
[1]
Continuous current is limited by package.
Quick reference
Conditions
≥ 25 °C; T
≤ 175 °C
j
j
T
= 25 °C; V
mb
GS
see
Figure 1
and
T
= 25 °C; see
mb
V
= 4.5 V; I
GS
D
V
= 12 V; see
DS
and
15
V
= 4.5 V; I
GS
D
V
= 12 V; see
DS
V
= 10 V; I
= 15 A;
GS
D
T
= 25 °C
j
Product data sheet
Suitable for logic level gate drive
sources
Notebook Voltage Regulator Module
(VRM)
Min
Typ
Max
-
-
30
[1]
= 10 V;
-
-
100
3
Figure 2
-
-
109
= 10 A;
-
8.7
-
Figure 14
= 10 A;
-
36.2
-
Figure 14
-
1.29
1.7
Unit
V
A
W
nC
nC
mΩ

PH1730AL,115 Summary of contents

  • Page 1

    PH1730AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

  • Page 2

    ... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PH1730AL LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads 4 ...

  • Page 3

    ... NXP Semiconductors 120 I D (A) (1) 100 100 Fig 1. Continuous drain current as a function of mounting base temperature (A) Limit R DSon ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PH1730AL_3 Product data sheet 003aac446 120 P der (%) 150 200 T (°C) mb Fig 2 ...

  • Page 4

    ... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base 10 Z th(j-mb) (K/W) 1 δ = 0.5 0 0.1 0.05 0. single shot - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PH1730AL_3 Product data sheet ...

  • Page 5

    ... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance R gate resistance G Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q pre-threshold ...

  • Page 6

    ... NXP Semiconductors Table 6. Characteristics …continued Symbol Parameter Source-drain diode V source-drain voltage SD t reverse recovery time rr Q recovered charge r [1] Tested to JEDEC standards where applicable. 300 (A) 10 3.6 250 V (V) = 3.2 3.4 GS 200 150 100 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values ...

  • Page 7

    ... NXP Semiconductors 8000 C iss C (pF) 6000 4000 C rss 2000 Fig 9. Input and reverse transfer capacitances as a function of gate-source voltage; typical values - ( min - Fig 11. Sub-threshold drain current as a function of gate-source voltage PH1730AL_3 Product data sheet 003aac455 3.0 R DSon (mΩ) 2.5 2.0 1.5 1 ...

  • Page 8

    ... NXP Semiconductors 2 a 1.5 1 0.5 0 − Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature ( ( Fig 15. Gate-source voltage as a function of gate charge; typical values PH1730AL_3 Product data sheet 03aa27 V 120 180 ( ° Fig 14. Gate charge waveform definitions 003aac448 6000 C (pF) ...

  • Page 9

    ... NXP Semiconductors Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PH1730AL_3 Product data sheet 003aac447 100 150 ° 0.0 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 January 2010 ...

  • Page 10

    ... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads 1/2 DIMENSIONS (mm are the original dimensions) UNIT 1.20 0.15 1.10 0.50 mm 0.25 1.01 0.00 0.95 0.35 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT669 Fig 18 ...

  • Page 11

    ... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PH1730AL_3 20100112 • Modifications: Various changes to content. PH1730AL_2 20090121 PH1730AL_1 20080911 PH1730AL_3 Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - Preliminary data sheet - All information provided in this document is subject to legal disclaimers. ...

  • Page 12

    ... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...

  • Page 13

    ... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

  • Page 14

    ... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Legal information .12 9.1 Data sheet status ...